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GaAs/AlGaAs Intersubband MID-Infrared Emitter

Published online by Cambridge University Press:  10 February 2011

G. Strasser ,
S. Gianordoli ,
L. Hvozdara ,
H. Bichl ,
K. Unterrainer ,
E. Gornik ,
P. Kruck ,
M. Helm  and
J. N. Heyman
G. Strasser
Affiliation:
TU Wien, Solid State Electronics, Vienna, AUSTRIA
S. Gianordoli
Affiliation:
TU Wien, Solid State Electronics, Vienna, AUSTRIA
L. Hvozdara
Affiliation:
TU Wien, Solid State Electronics, Vienna, AUSTRIA
H. Bichl
Affiliation:
TU Wien, Solid State Electronics, Vienna, AUSTRIA
K. Unterrainer
Affiliation:
TU Wien, Solid State Electronics, Vienna, AUSTRIA
E. Gornik
Affiliation:
TU Wien, Solid State Electronics, Vienna, AUSTRIA
P. Kruck
Affiliation:
Univ. Linz, Semiconductor Physics, Linz, AUSTRIA
M. Helm
Affiliation:
Univ. Linz, Semiconductor Physics, Linz, AUSTRIA
J. N. Heyman
Affiliation:
Macalester College, St. Paul, MN, USA
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Abstract

We report here the growth and characterization of intersubband quantum well structures based on the GaAs/AlGaAs material system, designed to emit radiation at approximately 7 micrometers. We present transport behavior, infrared photocurrent spectra, and electroluminescence data. First attempts to fabricate a laser structure from this devices encountered difficulties with the electrical properties of the AIGaAs waveguide cladding layers. Thus, we present measurements with different waveguide concepts as doped AlAs cladding layers and doped superlattice cladding structures.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 484: Symposium F – Infrared Applications of Semiconductors II , 1997 , 165
Copyright
Copyright © Materials Research Society 1998

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