Hostname: page-component-8448b6f56d-tj2md Total loading time: 0 Render date: 2024-04-24T08:41:03.067Z Has data issue: false hasContentIssue false
  • English
  • Français

Porous SiC – Prospective Applications (Invited)

Published online by Cambridge University Press:  11 February 2011

Marina Mynbaeva
Marina Mynbaeva*
Affiliation:
Ioffe Physico-Technical Institute, Polytechnicheskaya, 26, St.-Petersburg 194021 RUSSIA Crystal Growth Research Center, Ligovskii, 29, r.12H, St.-Petersburg 193036 RUSSIA
Get access

Abstract

Possible applications for porous SiC (PSC) are addressed and related innovative aspects discussed. The formation and properties of PSC itself are considered first, since they define the area where PSC can be used. Then epitaxial growth on PSC substrates is reviewed in detail, with the emphasis on the chemical vapor deposition (CVD) technique. Next, new applications featuring the in-diffusion of V and Si into PSC for obtaining semi-insulating material and autodoping of GaN epitaxial layers from PSC substrates are presented.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 742: Symposium K – Silicon Carbide-Materials, Processing, and Devices , 2002 , K6.6
Copyright
Copyright © Materials Research Society 2003

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Yonehara, T., Sakaguchi, K., Sato, N., Appl. Phys. Lett. 64, 2108 (1994). http://www.canon.com/eltran Google Scholar
2. Spanier, J. E., Dunne, G. T., Rowland, L. B., Herman, I. P., Appl. Phys. Lett. 76, 3879 (2000).Google Scholar
3. Mynbaeva, M., Saddow, S. E., Melnychuk, G., Nikitina, I., Scheglov, M., Sitnikova, A., Kuznetsov, N., Mynbaev, K., Dmitriev, V., Appl. Phys. Lett. 78, 117 (2001).Google Scholar
4. Saddow, S. E., Mynbaeva, M., Choyke, W. J., Devaty, R. P., Bai, Song, Melnychuk, G., Koshka, Y., Dmitriev, V., Wood, C. E. C., Mater. Science Forum 353–356, 115 (2001).Google Scholar
5. Saddow, S. E., Mynbaeva, M., Smith, M. C. D., Smirnov, A. N., Dmitriev, V., Appl. Surf. Sci. 184 72 (2001).Google Scholar
6. Melnychuk, G., Mynbaeva, M., Rendakova, S., Dmitriev, V., Saddow, S. E., Mater. Res. Symp. Proc., 622, T4.2.1 (2000).Google Scholar
7. Saddow, S. E., Melnychuck, G., Mynbaeva, M., Nikitina, I., Vetter, W. M., Jin, L., Dudley, M., Shamsuzzoha, M., Dmitriev, V., Wood, C. E. C., Mat. Res. Soc. Symp. Proc. 640 H2.7.1 (2001).Google Scholar
8. Bondarenko, V. P., Dorofeev, A. M., Tabulina, L. V., Poverchnost' 10, 64 (1985) (in Russian).Google Scholar
9. Muller, G., Brendel, K., phys. stat. sol. (a) 182 313 (2000).Google Scholar
10. Mynbaeva, M., Kuznetsov, N., Lavrent'ev, A., Mynbaev, K., Wolan, J. T., Grayson, B., Ivantsov, V., Syrkin, A., Fomin, A., Saddow, S. E., Presented at ECSCRM2002, Lincoping, Sweden, 2002 (To be published in Mater. Sci. Forum, 2003).Google Scholar
11. Hobgood, H.McD., Glass, R. C., Augustine, G., Hopkins, R. H., Jenny, J., Skowronski, M., Mitchel, W. C., Roth, M., Appl. Phys. Lett. 66, 1364 (1995).Google Scholar
12. Reshanov, S. A., Diamond and Related Materials 9, 480 (2000).Google Scholar
13. Sudarshan, T. S., Gradinaru, G., Korony, G., Gradinaru, S. A., Mitchel, W., Diamond and Related Materials 6, 1392 (1997).Google Scholar
14. Lebedev, A. A., Semiconductors 3, (1999).Google Scholar
15. Reshanov, S. A., Rastegaev, V. P., Diamond and Related Materials 10, 2035 (2001).Google Scholar
16. Yamanaka, H., Kamashiba, M., Jpn. J. Appl. Phys. 13, 1661 (1974).Google Scholar
17. Mynbaeva, M., Titkov, A., Kryzhanovski, A., Kotousova, I., Zubrilov, A. S., Ratnikov, V. V., Davydov, V.Yu., Kuznetsov, N. I., Mynbaev, K., Tsvetkov, D. V., Stepanov, S., Cherenkov, A., Dmitriev, V. A., MRS Internet J. Nitride Semicond. Res. 4, 14 (1999).Google Scholar
18. Konstantinov, A. O., Harris, C. I., Janzen, E.. Appl. Phys. Lett. 65, 2699 (1994).Google Scholar
19. Dmitriev, V. A. and Spencer, M. G., “SiC Fabrication Technology: Growth and Doping”, In: SiC Materials and Devices, ed. by Park, Y.S.. Semiconductors and Semimetals, V. 52 (Academic Press, New York, 1998), p. 61.Google Scholar
20. Ellison, A., Magnusson, B., Hemmingson, C., Magnusson, W., Iakimov, T., Storasta, L., Henry, A., Henelius, N., Janzen, E., Mater. Res. Soc. Symp. Proc. 640, H1.2 (2001).Google Scholar
21. Kimoto, T., Nakajima, T., Matsunami, H., Nakata, T., Inoue, M., Appl. Phys. Lett. 69, 1113 (1996).Google Scholar
22. Edwards, A., Dwight, D. N., Rao, M. V., Ridgway, M. C., Kelner, G., Papanicolau, N., J. Appl. Phys. 82, 4223 (1997).Google Scholar
23. Muller, St. G., Brady, M. F., Brixius, W. H., Fechko, G., Glass, R. C., Henshall, D., Hobgood, H. McD., Jenny, J. R., Leonard, R., Malta, D., Powell, A., Tsvetkov, V. F., Allen, S., Palmour, J., Carter, C. H. Jr, Mater. Sci. Forum 389–393, 23 (2002).Google Scholar
24. Abdurakhmanov, M. B., Bilyalov, R. R., Semicond. Sci. Technol. 11, 927 (1996).Google Scholar
25. Jerier, P., Dutartre, D., J. Electrochem. Soc. 146, 331 (1999).Google Scholar
26. Sheu, J. K., Chi, G. C., J. Phys.: Condens. Matter. 14, R657 (2002).Google Scholar
27. Handy, E. M., Rao, M. V., Jones, K. A., Derenge, M. A., Chi, P. H., Vispute, R. D., Venkatesan, T., Papanicolaou, N. A., Mittereder, J., J. Appl. Phys. 86, 746 (1999).Google Scholar
28. Pan, C. J., Chi, G. C., Sol.-State Electr. 43, 621 (1999).Google Scholar