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Study of GaInP/GaAs/GaInP Double Heterostructures Grown by MOCVD with Photoreflectance and Photoluminescence

Published online by Cambridge University Press:  22 February 2011

H. Kuan ,
S.C. Shei ,
W.J. Tzou  and
Y. K. Su
H. Kuan
Affiliation:
Department of Electrical Engineering, National Cheng Kung University, I University Road, Tainan, Taiwan, R.O.C.
S.C. Shei
Affiliation:
Department of Electrical Engineering, National Cheng Kung University, I University Road, Tainan, Taiwan, R.O.C.
W.J. Tzou
Affiliation:
Department of Electrical Engineering, National Cheng Kung University, I University Road, Tainan, Taiwan, R.O.C.
Y. K. Su
Affiliation:
Department of Electrical Engineering, National Cheng Kung University, I University Road, Tainan, Taiwan, R.O.C.
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Abstract

The GaInP-GaAs single quantum well structures grown by metal-organic chemical vapor deposition (MOCVD) were investigated by photoreflectance (PR) and photoluminescence (PL) spectroscopies. The built-in electric field in the GaAs close to the top surface was evaluated using the observed Franz-Keldysh oscillations. The fundamental energy gaps and broadening parameters were also determined. The full width at half maximum (FWHM) of the GaInP PL peak is 11 meV

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 340: Symposium E – Compound Semiconductor Epitaxy , 1994 , 129
Copyright
Copyright © Materials Research Society 1994

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References

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