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SOI Formation from Amorphous Silicon by Novel Gain Enhancement Method

Published online by Cambridge University Press:  15 March 2011

C.Y. Yuen ,
M.C. Poon ,
M. Chan ,
M. Qin ,
W.Y. Chan ,
S. Shivani  and
P.K. Ko
C.Y. Yuen
Affiliation:
Department of Electrical and Electronic Engineering, Hong Kong University of Science & Technology, Sai Kung, Hong Kong
M.C. Poon
Affiliation:
Department of Electrical and Electronic Engineering, Hong Kong University of Science & Technology, Sai Kung, Hong Kong
M. Chan
Affiliation:
Department of Electrical and Electronic Engineering, Hong Kong University of Science & Technology, Sai Kung, Hong Kong
M. Qin
Affiliation:
Department of Electrical and Electronic Engineering, Hong Kong University of Science & Technology, Sai Kung, Hong Kong
W.Y. Chan
Affiliation:
Department of Electrical and Electronic Engineering, Hong Kong University of Science & Technology, Sai Kung, Hong Kong
S. Shivani
Affiliation:
Department of Electrical and Electronic Engineering, Hong Kong University of Science & Technology, Sai Kung, Hong Kong
P.K. Ko
Affiliation:
Department of Electrical and Electronic Engineering, Hong Kong University of Science & Technology, Sai Kung, Hong Kong
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Abstract

Large grain (> 10 um) poly-Si film has been formed from nickel Metal Induced Lateral Crystallization (MILC) and subsequent high temperature annealing. The fabricated thin film transistors (TFT) have near SOI performance. The new technology has good potential to provide low cost SOI substrates, multi-layer devices and other novel applications.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 587: Symposium O – Substrate Engineering - Paving the Way to Epitaxy , 1999 , O8.2
Copyright
Copyright © Materials Research Society 2000

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References

1. Lee, S.W., Jeon, Y.C. and Joo, S.K., Appl. Phys. Lett. 66 (13), pp.1671–1673 (1995).Google Scholar
2. Lee, S.W., Joo, S.K., IEEE Electron Device Letters 17, No. 4, pp. 160–162 (1996).Google Scholar
3. Jin, Z., Bhat, G. A., Yeung, M., Kwok, H.S. and Wong, M., J. Appl. Phys. 84, No. 1, pp. 194–200 (1998).Google Scholar
4. Bhat, G. A., Jin, Z., Kwok, H. S. and Wong, M., IEEE Electron Device Letters 20, No. 2, pp. 97 (1999).Google Scholar
5. Subramanian, V. and Saraswat, K. C., IEEE Trans. Elecron Devices 45, No.9, pp.1934–1939, 1998.Google Scholar