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The Study on The Under Bump Metallurgy (Ubm) and 63SN-37PB Solder Bumps Interface for Flip Chip Interconnection

Published online by Cambridge University Press:  10 February 2011

Se-Young Jang
Affiliation:
Dept. of Materials Science and Engineering Korea Advanced Institute of Science and Technology
Kyung-Wook Paik
Affiliation:
Dept. of Materials Science and Engineering Korea Advanced Institute of Science and Technology
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Abstract

In the flip chip interconnection on organic substrates using eutectic Pb/Sn solder bumps, highly reliable Under Bump Metallurgy (UBM) is required to maintain adhesion and solder wettability. Various UBM systems such as l.tm Al/0.2 μm Ti/5 μm Cu, l μm A1/0.2 μm Ti/l μm Cu, 1 μm A1/0.2 μm Ni/1 μm Cu and 1 μm At/10.2μm Pd/l μm Cu, laid under eutectic Pb/Sn solder of low melting point, were investigated with regard to their interfacial reactions and adhesion properties. The effects of numbers of solder reflow and aging time on the growth of intermetallic compounds (IMC) and on the solder ball shear strength were investigated. Good ball shear strength was obtained with 1 μm AI/0.2μm Ti/5μm Cu and 1 μm Al/0.2 μm Ni/l μm Cu even after 4 solder reflows or 7 day aging at 150°C. In contrast, l μm Al/0.2 μm Ti/l μm Cu and l μm A1/0.21μm Pd/μm Cu shows poor ball shear strength. The decrease of the shear strength was mainly due to the direct contact between solder and nonwettable metal such as Ti and Al resulting in a delamination. Thin 1 μm Cu and 0.2 μm Pd diffusion barrier layer were completely consumed by Cu-Sn and Pd-Sn reaction.

Type
Research Article
Copyright
Copyright © Materials Research Society 1998

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References

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