Hostname: page-component-8448b6f56d-xtgtn Total loading time: 0 Render date: 2024-04-23T11:43:44.250Z Has data issue: false hasContentIssue false
  • English
  • Français

Development of combinatorial PLD-STM system for the quick nano-fabrication and evaluation

Published online by Cambridge University Press:  17 March 2011

Y. Matsumoto ,
T. Ohsawa ,
R. Takahashi  and
H. Koinuma
Y. Matsumoto
Affiliation:
Materials and Structures Laboratory, Tokyo Institute of Technology, 4259, Nagatsuta, Midori-ku, Yokohama 226-8503, Japan
T. Ohsawa
Affiliation:
Frontier Collaborative Research Center Laboratory, Tokyo Institute of Technology, 4259, Nagatsuta, Midori-ku, Yokohama 226-8503, Japan
R. Takahashi
Affiliation:
Frontier Collaborative Research Center Laboratory, Tokyo Institute of Technology, 4259, Nagatsuta, Midori-ku, Yokohama 226-8503, Japan
H. Koinuma
Affiliation:
Materials and Structures Laboratory, Tokyo Institute of Technology, 4259, Nagatsuta, Midori-ku, Yokohama 226-8503, Japan Frontier Collaborative Research Center Laboratory, Tokyo Institute of Technology, 4259, Nagatsuta, Midori-ku, Yokohama 226-8503, Japan JST and COMET
Get access

Abstract

A combinatorial PLD-STM system has been developed for quick nano-fabrication and evaluation of epitaxial thin films and catalysts. Through a gate valve, a combinatorial nano-materials library fabricated in a PLD chamber can be transferred to a surface analysis chamber equipped with LEED and STM. The LEED pattern and atomically resolved STM image for systematically varied samples in the library are measured by locating one sample to another at the electron beam and STM probe position. In this way, we have quickly elucidated the initial growth process of SrO on SrTiO3(001) as well as surface structures of transition metal deposited TiO2 anatase. The combinatorial PLD-STM system has been verified to be very efficient technique for the exploration and optimization of nano-materials.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 700: Symposium S – Combinatorial and Artificial Intelligence Methods in Materials Science , 2001 , S1.1
Copyright
Copyright © Materials Research Society 2002

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1. Plunkett, M. J. and Ellman, J. A., Sci. Am. April 55, (1997).Google Scholar
2. Xiang, X.-D., Sun, Xiaodong, Briceno, Gabriel, Lou, Yulin, Wang, Kai-An, Hauyee, Chang, Wallace-Freedman, William G., Chen, Sung-Wei and Schultz, Peter. G., Science, 268, 1738, (1995).Google Scholar
3. Koinuma, H., Solid State Ionics, 108, 1 (1998).Google Scholar
4. Matsumoto, Y., Murakami, M., Jin, Z., Ohtomo, A., Lippmaa, M., Kawasaki, M., and Koinuma, H., Jpn. Appl. Phys. 38, L603 (1999).Google Scholar
5. Fukumura, T., Ohtani, M., Kawasaki, M., Okimoto, Y., Kageyama, T., Koida, T., Hasegawa, T., Tokura, Y., Koinuma, H., Appl. Phys. Lett. 77, 3426 (2000).Google Scholar
6. Yoshimoto, M., Maeda, T., Ohnishi, T., Lee, G. H. and Koinuma, H., Mat. Res. Soc. Symp. Proc. 401, 21 (1996).Google Scholar
7. Lippmaa, M., Nakagawa, N., Kawasaki, M., Ohashi, S., Koinuma, H., Appl. Phys. Lett. 76, 2439 (2000).Google Scholar
8. Kawasaki, M., Takahashi, K., Maeda, T., Tsuchiya, R., Shinohara, M., Ishiyama, O., Yonezawa, T., Yoshimoto, M., and Koinuma, H., Science, 266, 1540 (1994).Google Scholar
9. Yoshimoto, M., Maeda, T., Ohnishi, T., Koinuma, H., Ishiyama, O., Shinohara, M., Kubo, M., Miura, R. and Miyamoto, A., Appl. Phys. Lett. 67, 2615 (1995).Google Scholar
10. Takahashi, R., Matsumoto, Y., Ohsawa, T., Lippmaa, M., Kawasaki, M. and Koinuma, H., J. Cryst. Growth 234, 505 (2002).Google Scholar
11. Matsumoto, Y., Shimizu, T., Toyoda, A. and Sato, E., J. Phys. Chem. 86, 3581 (1982).Google Scholar
12. Gan, S., Liang, Y., Baer, D. R., Grant, A. W., Surf. Sci. 475, 159 (2001).Google Scholar
13. Liang, Y., Gan, S., Chambers, S. A. and Altman, E. I., Phys. Rev. B 63, 235402 (2001).Google Scholar
14. Herman, G. S., Sievers, M. R. and Gao, Y., Phys. Rev. Lett. 84, 3354 (2000).Google Scholar
15. Chen, S., Mason, M. G., Gysling, H. J., Paz-Pujalt, G. R., Blanton, T. N., Castro, T., Chen, K. M., Fictorie, C. P., Gladfelter, W. L., Franciosi, A., Chohen, P. I., and Evans, J. F., J. Vac. Sci. Technol. A 11, 5, 2419 (1993).Google Scholar
16. Sugimura, W., Yamazaki, A., Shigetani, H., Tanaka, J. and Mitsuhashi, T., Jpn. J. Appl. Phys., 36, 7358 (1997).Google Scholar
17. Chambers, S. A., Surf. Sci. Rep. 39, 105 (2000).Google Scholar
18. Murakami, M., Matsumoto, Y., Nakajima, K., Makino, T., Segawa, Y., Chikyow, T., Ahmet, P. A., Kawasaki, M. and Koinuma, H., Appl. Phys. Lett. 78, 2664 (2001).Google Scholar
19. Park, B. H., Li, L. S., Gibbons, B. J., Huang, J. Y. and Jia, Q. X., Appl. Phys. Lett. 79, 2797 (2001).Google Scholar
20. Gan, S., El-azab, A., Liang, Y., Surf. Sci. Lett. 479, L369 (2001).Google Scholar