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Reduction of thermal conductivity in semiconducting composite films consisting of silicon and transition-metal silicide nanocrystals

Published online by Cambridge University Press:  11 April 2013

N. Uchida
Affiliation:
Nanoelectronics Research Institute, National Institute of Advanced Industrial Science and Technology, Japan
Y. Ohishi
Affiliation:
Graduate School of Engineering, Osaka University, Japan
K. Kurosaki
Affiliation:
Graduate School of Engineering, Osaka University, Japan
S. Yamanaka
Affiliation:
Graduate School of Engineering, Osaka University, Japan Research Institute of Nuclear Engineering, University of Fukui, Japan
T. Tada
Affiliation:
Nanoelectronics Research Institute, National Institute of Advanced Industrial Science and Technology, Japan
T. Kanayama
Affiliation:
National Institute of Advanced Industrial Science and Technology, Japan
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Abstract

We observed significant reduction of thermal conductivity in semiconducting composite films of Si and molybdenum (Mo)-silicide nanocrystals (NCs). These films were synthesized by phase separation due to annealing at 700 -1000°C from sputtered amorphous Mo–Si alloy. Transmission electron microscope images showed that the NCs were grown to diameters of∼10 nm in the films by annealing at 800°C. Raman scattering spectra showed lower shift of peak positions of Si transverse optical (TO) phonon due to the confinement effect and the tensile stress. The electrical resistivity of the films was 0.17- 9 Ωm at room temperature and showed a semiconducting temperature dependence at 20-400 K. Thermal conductivity of the film was reduced to 4.4 W/mK by enhancement of phonon scattering at NC interfaces, suggesting that the composite film is promising as a high-efficiency Si-based thermoelectric material.

Type
Articles
Copyright
Copyright © Materials Research Society 2013

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References

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