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The Relationship between Growth Speed and Ambient Humidity in Convective Self-assembly

Published online by Cambridge University Press:  01 February 2011

Hans D. Robinson ,
Kai Chen  and
Stefan V. Stoianov
Hans D. Robinson
Affiliation:
hansr@vt.edu, Virginia Tech, Physics, Blacksburg, Virginia, United States
Kai Chen
Affiliation:
kaichen@vt.edu, Virginia Tech, Physics, Blacksburg, Virginia, United States
Stefan V. Stoianov
Affiliation:
stoianov@vt.edu, Virginia Tech, Physics, Blacksburg, Virginia, United States
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Abstract

We present a variation of a standard convective self-assembly technique, where the drying meniscus is restricted by a straight-edge located approximately 100 μm above the substrate adjacent to the drying zone. We find this technique to yield films at roughly twice the growth rate compared to the standard technique. We attribute this to differing local evaporation rates in the two cases. We also investigate how the crystal growth rate depends on ambient relative humidity and find a clear linear dependency, which we attribute to the length of the drying zone being constant over a wide range of humidities.

Keywords

self-assemblynanostructurecrystal growth
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1273: Symposium MM – Evaporative Self Assembly of Polymers, Nanoparticles, and DNA , 2010 , 1273-MM01-07
Copyright
Copyright © Materials Research Society 2010

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References

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