Hostname: page-component-8448b6f56d-gtxcr Total loading time: 0 Render date: 2024-04-24T08:48:48.413Z Has data issue: false hasContentIssue false
  • English
  • Français

The Formation of Defects Degrading Gate Oxide Integrity During CZ-Si Crystal Growth

Published online by Cambridge University Press:  26 February 2011

Y. Tsumori ,
K. Nakai ,
T. Iwasaki ,
H. Haga ,
K. Kojima  and
T. Nakashizu
Y. Tsumori
Affiliation:
Nippon Steel Corp., Electronics Research Labs., Shimata, Hikari, Yamaguchi 743, Japan
K. Nakai
Affiliation:
Nippon Steel Corp., Electronics Research Labs., Shimata, Hikari, Yamaguchi 743, Japan
T. Iwasaki
Affiliation:
Nippon Steel Corp., Electronics Research Labs., Shimata, Hikari, Yamaguchi 743, Japan
H. Haga
Affiliation:
Nippon Steel Corp., Electronics Research Labs., Shimata, Hikari, Yamaguchi 743, Japan
K. Kojima
Affiliation:
NSC Electron Corp., Shimata, Hikari, Yamaguchi 743, Japan
T. Nakashizu
Affiliation:
NSC Electron Corp., Shimata, Hikari, Yamaguchi 743, Japan
Get access

Abstract

The formation of grown-in defects degrading the gate oxide integrity (GOI) has been studied. The growth-halting experiments were carried out to investigate the temperature ranges at which the formation of the defects was promoted or suppressed. GOI is improved in the crystal regions slowly cooled above 1330°C and between 1060°C and 1100°C. It is degraded in the crystal regions held below 1060°C. In the peripheral of the crystals, those temperature ranges are about 30°C lower. The defects are formed and grown below 1060°C in the center part of the crystal. The defect density is decreased with cooling time between 1060°C and 1100°C. These phenomena are considered to be closely related with reactions of intrinsic point defects, that is, the pair annihilation or the aggregation. The temperatures at which the pair annihilation and the aggregation of the point defects occur are dependent upon the supersaturation of the point defects.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 378: Symposium B – Defect and Impurity-Engineered Semiconductors and Devices , 1995 , 23
Copyright
Copyright © Materials Research Society 1995

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1. Yamabe and K. Taniguchi, K., IEEE Trans. Electron Devices, ED–32 423 (1985)Google Scholar
2. Tachimori, M., Sakon, T. and Kaneko, T., 7th Kessho Kogaku Symp. of Jpn. Soc. Appl. Phys., ISAP Catalog No. AP902217, 27 (1990) in JapaneseGoogle Scholar
3. Hasebe, M., Takeoka, Y., Shinoyama, S. and Naito, S., in Proc. Int. Conf. Defect Control inSemiconductors, Yokohama, 1989, ed. Sumino, K. (North-Holland, Amsterdam, 1990) pp.157 Google Scholar
4. Yamauchi, T., Tsumori, Y., Nakashizu, T., Esaka, H., Takao, S. and Shinoyama, S., Jpn. J. Appl. Phys. 31 L439 (1992)Google Scholar
5. Yamagishi, H., Fusegawa, I., Fujimaki, N. and Katayama, M. in Proc. Symp. Advanced Science and Technology of Silicon Materials, Kona, Hawaii 1991 (Japan Society for the Promotion of Science 145th Comimitee, Tokyo, 1991) pp.83 Google Scholar
6. Ryuta, J., Morita, E., Tanaka, T. and Shimanuki, Y., Jpn. J. Appl. Phys. 29 LI947 (1990)Google Scholar
7. Ryuta, J., Morita, E., Tanaka, T. and Shimanuki, Y., Jpn. J. Appl. Phys. 31 L293 (1990)Google Scholar
8. Sadamitsu, S., Umeno, S., Koike, Y., Hourai, M., Sumita, S. and Shigematsu, T., Jpn. J. Appl. Phys. 32 3675 (1993)Google Scholar
9. Hourai, M., Nagashima, T., Kajita, E. and Miki, S. in Semiconductor Silicon 1994, edited by Huff, H.R., Bergholz, W., Sumino, K. (The Electrochem. Soc, Pennington, NJ, 1994) pp.156 Google Scholar
10. Abe, T. in Proc. of Progress in Semiconductor Fabrication, Technical Conference at SEMICQN Europe 1993, SEMI Europe, Brussels (1993)Google Scholar
11. Ammom, W.v., Ehlert, A., Lambert, U., Graf, D., Brohl, M. and Wagner, P. in Semiconductor Silicon 1994, edited by Huff, H.R., Bergholz, W., Sumino, K. (The Electrochem. Soc, Pennington, NJ, 1994) pp.136 Google Scholar
12. Park, J-G., Kirk, H., Cho, K-C., Lee, H-K., Lee, C-S. and Rozgonyi, G.A.in Semiconductor Silicon 1994, edited by Huff, H.R., Bergholz, W., Sumino, K. (The Electrochem. Soc, Pennington, NJ, 1994) pp.370 Google Scholar
13. Osburn, C.M. and Ormond, D.W., J. Electrochem. Soc. 119 591 (1972)Google Scholar
14. Jenkins, M.W., J. Electrochem. Soc. 124 757 (1977)Google Scholar
15. Iwasaki, T., Tsumori, Y., Nakai, K., Haga, H., Kojima, K. and Nakashizu, T. in Semiconductor Silicon 1994, edited by Huff, H.R., Bergholz, W., Sumino, K. (The Electrochem. Soc, Pennington, NJ, 1994) pp.744 Google Scholar
16. Habu, R., Yunoki, I., Saito, T. and Tomiura, A., Jpn. J. Appl. Phys. 32 1740 (1993)Google Scholar
17. Frank, W., Gosele, U., Mehrer, H. and Seeger, A., in DIFFUSION IN CRYSTALLINE SOLIDS, edited by Murch, G.E. and Nowick, A.S. (ACADEMIC PRESS INC., 1984) pp.63–142Google Scholar