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Microstructural And Microchemical Analysis of Chalcopyrite Cu(In,Ga)Se2 Films

Published online by Cambridge University Press:  01 February 2011

Chun-Ming Li
Affiliation:
Department of Materials Science and Engineering University of Illinois at Urbana-Champaign1304 West Green Street, Urbana, IL 61801, U.S.A.
Chang-Hui Lei
Affiliation:
Department of Materials Science and Engineering University of Illinois at Urbana-Champaign1304 West Green Street, Urbana, IL 61801, U.S.A.
Ian M. Robertson
Affiliation:
Department of Materials Science and Engineering University of Illinois at Urbana-Champaign1304 West Green Street, Urbana, IL 61801, U.S.A.
Angus Rockett
Affiliation:
Department of Materials Science and Engineering University of Illinois at Urbana-Champaign1304 West Green Street, Urbana, IL 61801, U.S.A.
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Abstract

The microstructure and microchemistry of Cu(In, Ga)Se2 (CIGS) films have been analyzed by means of transmission electron microscopy (TEM). Specimens were obtained from a number of groups producing high-performance solar cells from these materials. Both plan-view and cross-sectional TEM samples were prepared by mechanical grinding and ion milling. Twins can be found easily within the films while dislocations are present only in a few grains and with low density. No extended structural defects such as stacking faults were discovered. X-ray energy dispersive spectroscopy was used to study the chemical composition of grains and grain boundaries. Experimental results showed no difference between the composition in the grain interiors and the grain boundary. In addition, there is no obvious enhancement of oxygen and sodium at grain boundaries. Structural depth dependences were also not found.

Type
Research Article
Copyright
Copyright © Materials Research Society 2003

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