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Selective Mn Doping of Thin Film Zns:Mn Electroluminescent Devices by Laser Photochemical Vapor Deposition*

Published online by Cambridge University Press:  15 February 2011

A. Kitai  and
G.J. Wolga
A. Kitai
Affiliation:
School of Electrical Engineering and National Research and Resource Facility for Submicron Structures, Cornell University, Ithaca, NY 14853
G.J. Wolga
Affiliation:
School of Electrical Engineering and National Research and Resource Facility for Submicron Structures, Cornell University, Ithaca, NY 14853
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Abstract

U.V. laser radiation from a krypton ion laser was used to dissociate manganese carbonyl [Mn2 (CO)10*] at the surface of a ZnS thin film. The resulting Mn deposit was thermally diffused into the film to form a ZnS:Mn thin film electroluminescent (TFEL) device with spatially selective Mn doping. Process parameters and techniques are described as well as electroluminescence measurements on display elements. Finally we suggest applications of this process to future TFEL displays.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 17: Symposium I – Laser Diagnostics and Photochemical Processing for Semiconductor Devices , 1982 , 141
Copyright
Copyright © Materials Research Society 1983

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Footnotes

*

Work supported by the National Science Foundation under Grant ECS-8200312 to the National Research and Resource Facility for Submicron Structures.

References

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