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Cross-Sectional TEM Sample Preparation for Multilayer Electronic Materials

Published online by Cambridge University Press:  21 February 2011

Peng-Heng Chang ,
M. D. Coviello  and
A. F. Scott
Peng-Heng Chang
Affiliation:
Materials Science Laboratory, Texas Instruments Inc., P.O. Box 655936, MS 147, Dallas, TX 75265
M. D. Coviello
Affiliation:
Materials Science Laboratory, Texas Instruments Inc., P.O. Box 655936, MS 147, Dallas, TX 75265
A. F. Scott
Affiliation:
Materials Science Laboratory, Texas Instruments Inc., P.O. Box 655936, MS 147, Dallas, TX 75265
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Abstract

The preparation of cross-sectional TEM samples from multilayer materials commonly encountered in electronic industry is difficult in general due to the large variation in chemical and physical etching rate. We have developed a technique consisting of a median incidence angle ion sputtering to perforation followed by a short time (<2 hours) low incidence angle sputtering with the glue line direction shielded from the ion beams. This technique takes advantage of the fast sputtering rate associated with the median incidence angle sputtering initially. The near normal (relative to the glue line direction) low angle sputtering in the second step smooths out any non-uniformity in thickness due to the strong dependence of sputtering rate on the sputtering angle. High quality TEM samples prepared from many different types of multilayer structures using this technique are demonstrated.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 115: Symposium W – Specimen Preparation for Transmission Electron Microscopy of Materials I , 1987 , 93
Copyright
Copyright © Materials Research Society 1988

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References

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