Hostname: page-component-8448b6f56d-jr42d Total loading time: 0 Render date: 2024-04-16T09:43:24.498Z Has data issue: false hasContentIssue false
  • English
  • Français

Islanding and Surface Diffusion in Semiconductor Heteroepitaxy: Ge on Si

Published online by Cambridge University Press:  26 February 2011

G. J. Fisanick ,
H.-J. Gossmann  and
P. Kuo
G. J. Fisanick
Affiliation:
AT&T Bell Laboratories, Murray Hill, N.J. 07974
H.-J. Gossmann
Affiliation:
AT&T Bell Laboratories, Murray Hill, N.J. 07974
P. Kuo
Affiliation:
Massachusetts Institute of Technology, Cambridge, MA 02139
Get access

Abstract

Islanding and surface diffusion for Ge on Si(111)7×7 and Si(100)2×1 surfaces were examined in a UHV apparatus with in situ scanning Auger/SEM capabilities. At room-temperature uniform growth is observed, while elevated temperatures lead to Stranski-Krastanov growth with complex island size distributions. Extensive surface diffusion is observed on Si(100)2×l; however, surface diffusion is demonstrated to be extremely sensitive to contamination with carbon on the order of ≈0.05 ML, as well as to e-beam irradiation.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 102 , 1987 , 25
Copyright
Copyright © Materials Research Society 1988

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1.Wagner, H., in Surface Mobilities on Solid Materials, Binh, Vu Thien ed., NATO ASI Series, Series B, Vol.86, (Plenum, 1983); E. Suliga and M. Henzler, J. Phys. C 16, 1543 (1983); M. Futamoto, M. Hanbücken, C. J. Harland, G. W. Jones, and J. A. Venables, Surf. Sci. 150, 430 (1985); M. A. Morris, C. J. Barnes and D. A. King, Surf. Sci. 173, 618 (1986).Google Scholar
2.Chen, P., Bolmont, D. and Sebenne, C. A., Solid State Commun. 46, 689 (1983).Google Scholar
3.Gossmann, H.-J., Feldman, L. C. and Gibson, W. M., Surf. Sci. 155, 413 (1985).Google Scholar
4.Marée, P. M. J., Thesis, FOM-Institute Amsterdam, Netherlands, 1987Google Scholar
5.Zinke-Allmang, M., Gossmann, H.-J., Feldman, L. C. and Fisanick, G. J., Materials Research Society Symposia Proceedings Vol.77 (Interfaces, Superlattices, and Thin Films, Boston, 1986), J. D. Dow and I. K. Schuller, eds., Materials Research Society, Pittsburgh, 1987, p. 703 ; M. Zinke-Allmang, H.-J. Gossmann, L. C. Feldman and G. J. Fisanick, J. Vac. Sci. Technol. A5, 2030 ( 1987 ).Google Scholar
6.Gossmann, H.-J., Bean, J. C., Feldman, L. C. and Gibson, W. M., Surf. Sci. 138, L175 (1984).Google Scholar
7.McVay, G. L. and DuCharme, A. R., J. Appl. Phys. 44, 1409 (1973).Google Scholar