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Functional voids by gas ion implantation for applications in semiconductor processing

Published online by Cambridge University Press:  01 February 2011

V. Raineri
Affiliation:
CNR - IMM sezione Catania - Stradale Primosole, 50 I 95121 Catania, Italy
E. Rimini
Affiliation:
CNR - IMM sezione Catania - Stradale Primosole, 50 I 95121 Catania, Italy INFM and Dipartimento di Fisica dell'Università Corso Italia, 57 - I 95129 Catania, Italy
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Abstract

The recent work in the field is reviewed and some new applications are reported. In particular we review some aspects where new contributions have been added. The mechanism of bubble formation when He is implanted into silicon is described till the supersaturation of vacancies (void formation). The void evolution has been described considering direct coalescence or Ostwald ripening. Applications such as gettering, lifetime control, and more recently nanosensors for interstitials are critically discussed.

Type
Research Article
Copyright
Copyright © Materials Research Society 2002

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References

[1] Blackburn, R., Metallurgical Reviews, 11, 159 (1966)Google Scholar
[2] Donnelly, S.E., Radiation Effects, 90, 1 (1985)Google Scholar
[3] Reed, D.J., Radiation Effects, 31, 129 (1977)Google Scholar
[4] Elliman, RG, Johnson, ST, Short, KT and Williams, JS, Mater. Res. Soc. Symp. Proc. 27, 229 (1983)Google Scholar
[5] Myers, S.M., Stein, H.J., and Follstaedt, D.M., Phys. Rev. B, 51, 9742 (1995)Google Scholar
[6] Myers, S.M., Petersen, G.A. and Seager, C.H., J. Appl. Phys. 80, 3717 (1996) and reference therein.Google Scholar
[7] Raineri, V., Solid State Phenomena, 57-58 (1997) 43 and reference therein.Google Scholar
[8] Wong-Leung, J., Ascheron, C.E., Petravic, M., Elliman, R.G., and Williams, J.S., Appl. Phys. Lett. 66, 1231 (1995)Google Scholar
[9] Mohadjeri, B., Williams, J.S., and Wong-Leung, J., Appl. Phys. Lett. 66, 1889 (1995)Google Scholar
[10] Overwijk, M.H.F., Politiek, J., Kruif, R.C.M. de, and Zalm, P.C., Nucl. Instrum. Methods Phys. Res. B 96, 257 (1995)Google Scholar
[11] Seager, CH, Myers, SM, Anderson, RA, Warren, WL, and Follstaedt, DM, Phys. Rev. B 50, 2458 (1994)Google Scholar
[12] Saggio, M., Raineri, V., Letor, R., and Frisina, F., IEEE Electron Dev. Let. 18, 333 (1997)Google Scholar
[13] Corni, F., Calzolari, G., Frabboni, S., Nobili, C., Ottaviani, G., Tonini, R., Cerofolini, G.F., Leone, D., Servidori, M., Brusa, R.S., Karwasz, G.P., Tiengo, N., and Zecca, A., J. Appl. Phys. 85, 1401 (1999)Google Scholar
[14] Brusa, R.S., Karwasz, G.P., Tiengo, N., Zecca, A., Corni, F., Calzolari, G., and Nobili, C., J. Appl. Phys. 85, 2390 (1999)Google Scholar
[15] Corni, F., Nobili, C., Ottaviani, G., Tonini, R., Calzolari, G., Cerofolini, G.F., and Queirolo, G., Phys. Rev. B 56, 7331 (1997)Google Scholar
[16] Tonini, R., Corni, F., Frabboni, S., Ottaviani, G., and Cerofolini, G.F., J. Appl. Phys. 84, 4802 (1998)Google Scholar
[17] Alatalo, M., Puska, M.J., and Nieminen, R.M., Phys. Rev. B 46, 12806 (1992)Google Scholar
[18] Estreicher, S.K., Weber, J., Derecskei-Kovacs, A. and Marynick, D.S., Phys. Rev. B 55, 5037 (1997)Google Scholar
[19] Raineri, V., Coffa, S., Szilágyi, E., Gyulai, J., and Rimini, E., Phys. Rev. B 61, 937 (2000)Google Scholar
[20] Davis, G., Phys. Rep. 176, 83 (1989)Google Scholar
[21] Davies, G., Lightowlers, E.C., and Ciedanawaska, Z.F., J. Phys. C 20, 191 (1987)Google Scholar
[22] Reed, D.J., Radiation Effects 31, 129 (1977)Google Scholar
[23] Weldon, M.K., Collot, M., Chabal, Y. J., Venezia, V. C., Agarwal, A., Haynes, T. E., Eaglesham, D. J., Christman, S. B., and Chaban, E. E., Appl. Phys. Lett. 73, 3721 (1998)Google Scholar
[24] Bruel, M.K., Electron. Lett. 31, 1201 (1995)Google Scholar
[25] Libertino, S., Coffa, S., Benton, J. L., Halliburton, K., Eaglesham, D.J., Nucl. Instr. and Methods B 148, 247 (1999)Google Scholar
[26] Benton, J.L., Libertino, S., Kringoi, P., Eaglesham, D.J., Poate, J. M., and Coffa, S., J. Appl. Phys. 82, 120 (1997)Google Scholar
[27] Roqueta, F., Grob, A., Grob, J.J., Jerisian, R., Stoquert, J.P. and Ventura, L., Nucl. Instr. and Meth. B 147, 298 (1999)Google Scholar
[28] Chandrasekhar, S., Rev. Mod. Phys. 15, 1 (1943)Google Scholar
[29] Kaletta, D., Radiation Effects, 78, 245 (1983)Google Scholar
[30] Evans, J., Private communication.Google Scholar
[31] Vishnyakov, V.M., Donnelly, S.E., Carter, G., Birtcher, R.C., and Haworth, L., Solid State Phenomena 82-84, 267 (2002)Google Scholar
[32] Myers, S.M., Follstaedt, D.M., and Bishop, D.M., Mater. Res.Soc. Symp. Proc. 316, 133 (1994)Google Scholar
[33] Wong-Leung, J., Nygren, E., Williams, J.S., Appl. Phys. Lett. 67, 416 (1995)Google Scholar
[34] Myers, S.M., Follstaedt, D.M., Petersen, G.A., Seager, C.H., stein, H.J., and Wampler, W.R., Nucl. Instr. and Meth. In Phys. Res. B 106, 379 (1995)Google Scholar
[35] Myers, S. M. and Follstaedt, D.M., J. Appl. Phys. 79, 1337 (1996)Google Scholar
[36] Myers, S.M., Petersen, G.A., Follstaedt, D.M., Headley, T.J., Michael, J.R., Seager, C.H., Nucl. Instr. and Meth. B 120, 43 (1996)Google Scholar
[37] Himpsel, F.J., Surf. Sci. Rep. 12, 1 (1990)Google Scholar
[38] Raineri, V. and Campisano, S.U., Appl. Phys. Lett. 69, 1783 (1996)Google Scholar
[39] Raineri, V., Giuffrida, S., and Rimini, E., Appl. Phys. Lett., 79, 3959 (2001)Google Scholar
[40] Harrington, W.L., Honing, R.E., Goodman, A.M., and Williams, R., Appl. Phys. Lett., 27, 644 (1975).Google Scholar
[41] Johannessen, J.S. and Spicer, W.E., J. Appl. Phys., 47, 3028 (1976)Google Scholar