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Electron Traps in n-GaN Grown on Si (111) Substrates by MOVPE

Published online by Cambridge University Press:  01 February 2011

Tsuneo Ito ,
Yutaka Terada  and
Takashi Egawa
Tsuneo Ito
Affiliation:
itot@dowa.co.jp, DOWA Electronics Materials Co.,Ltd., DOWA Semiconductor AKITA, Sunada 1, Iijima, Akita, 011-0911, Japan
Yutaka Terada
Affiliation:
yutaka_1213jp@yahoo.co.jp, Nagoya Institute of Technology, Research Center for Nano-Device and System, Gokiso-cho,Showa-ku, NAGOYA, 466-8555, Japan
Takashi Egawa
Affiliation:
egawa.takashi@nitech.ac.jp, Nagoya Institute of Technology, Research Center for Nano-Device and System, Gokiso-cho,Showa-ku, NAGOYA, 466-8555, Japan
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Abstract

Deep level electron traps in n-GaN grown by metal organic vapor phase epitaxy (MOVPE) on Si (111) substrate were studied by means of deep level transient spectroscopy (DLTS). The growth of n-GaN on different pair number of AlN/GaN superlattice buffer layers (SLS) system and on c-face sapphire substrate are compared. Three deep electron traps labeled E4 (0.7-0.8 eV), E5 (1.0-1.1 eV), were observed in n-GaN on Si substrate. And the concentrations of these traps observed for n-GaN on Si are very different from that on sapphire substrate. E4 is the dominant of these levels for n-GaN on Si substrate, and it behaves like point-defect due to based on the analysis by electron capture kinetics, in spite of having high dislocation density of the order of 1010 cm−3.

Keywords

nitridedeep level transient spectroscopy (DLTS)Si
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1068: Symposium C – Advances in GaN, GaAs, SiC and Related Alloys on Silicon Substrates , 2008 , 1068-C06-09
Copyright
Copyright © Materials Research Society 2008

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