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Effects of Substrate Temperature and Atomic Hydrogen Flow on the Mircocrystallinity of Evaporated Hydrogenated silicon Films

Published online by Cambridge University Press:  01 February 2011

A.J. Stoltz ,
Whitney Mason ,
J.D. Benson ,
J.H. Dinan ,
K. McCormack  and
A. Kaleczyc
A.J. Stoltz
Affiliation:
Night Vision & Electronic Sensors Directorate, Ft. Belvoir, VA 22060
Whitney Mason
Affiliation:
Night Vision & Electronic Sensors Directorate, Ft. Belvoir, VA 22060
J.D. Benson
Affiliation:
Night Vision & Electronic Sensors Directorate, Ft. Belvoir, VA 22060
J.H. Dinan
Affiliation:
Night Vision & Electronic Sensors Directorate, Ft. Belvoir, VA 22060
K. McCormack
Affiliation:
Institute for Defense Analysis, Alexandra, VA
A. Kaleczyc
Affiliation:
E-OIR Measurements, Inc., Spotsylvania, VA 22553
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Abstract

As a first step toward an understanding of the chemical and structural role of hydrogen in hydrogenated amorphous silicon, we utilized electron beam evaporation in an ultra high vacuum environment to deposit films of amorphous silicon and systematically dosed these films with atomic hydrogen during deposition. Secondary Ion Mass Spectroscopy (SIMS) data indicated that hydrogen concentration can be varied from the detection limit of SIMS to a value in excess of 1021 atoms cm-3. The intentional addition of hydrogen caused the concentration to fall from in an excess of 1021 atoms*cm-3 to below 1018 atoms*cm-3.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 715: Symposium A – Amorphous and Heterogeneous Silicon-Based Films-2002 , 2002 , A19.9
Copyright
Copyright © Materials Research Society 2002

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