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Nanosecond Fast Switching Processes Observed in Gapless-Type, Ta2O5–Based Atomic Switches

Published online by Cambridge University Press:  13 February 2015

Tohru Tsuruoka ,
Tsuyoshi Hasegawa  and
Masakazu Aono
Tohru Tsuruoka
Affiliation:
International Center for Materials Nanoarchitectonics (MANA), National Institute for Materials Science (NIMS), 1-1 Namiki, Tsukuba 305-044, Japan Core Research for Evolutional Science and Technology (CREST), Japan Science and Technology Agency (JST), 7 Gobancho, Chiyoda-ku, Tokyo 102-0075, Japan
Tsuyoshi Hasegawa
Affiliation:
International Center for Materials Nanoarchitectonics (MANA), National Institute for Materials Science (NIMS), 1-1 Namiki, Tsukuba 305-044, Japan Core Research for Evolutional Science and Technology (CREST), Japan Science and Technology Agency (JST), 7 Gobancho, Chiyoda-ku, Tokyo 102-0075, Japan
Masakazu Aono
Affiliation:
International Center for Materials Nanoarchitectonics (MANA), National Institute for Materials Science (NIMS), 1-1 Namiki, Tsukuba 305-044, Japan
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Abstract

The switching speed of a Cu/Ta2O5/Pt atomic switch between a high-resistance (OFF) state and a low-resistance (ON) state was evaluated by transient current measurements under the application of a short voltage pulse. It was found that the SET time from the OFF state to the ON state decreased as low as 1 ns, and the RESET time from the ON state to the OFF state reached a few ns using moderate pulse amplitudes. The switching time depends strongly on the pulse amplitude and the cell resistance before applying a voltage pulse. This observation indicates that oxide-based atomic switches hold potential for fast-switching memory applications. It was also found that Cu nucleation on the Pt electrode is likely to the rate-limiting process determining the SET time and the REST time appears to be preferentially determined by thermochemical reaction.

Keywords

oxideCumemory
Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 1729: Symposium M – Materials and Technology for Nonvolatile Memories , 2015 , pp. 35 - 40
Copyright
Copyright © Materials Research Society 2015 

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References

REFERENCES

Terabe, K., Hasegawa, T., Nakayama, T., Aono, M., Nature 433, 47 (2005).CrossRefGoogle Scholar
Hasegawa, T., Terabe, K., Sakamoto, T., Aono, M., MRS Bull. 34, 929 (2009).CrossRefGoogle Scholar
Gao, M. G., Chen, Y. S., Sun, J. R., Shang, D. S., Liu, L. F., Kang, J. F., and Shen, B. G., Appl. Phys. Lett. 101, 203502 (2012).Google Scholar
Shrestha, P., Ochia, A., Cheung, K. P., Cambell, J. P., Braumgart, H., and Harris, G., Electrochem. Solid-State Lett. 15, H173 (2012).CrossRefGoogle Scholar
Tappertzhofen, S., Valov, I., and Waser, R., Nanotechnology 23, 145703 (2012).CrossRefGoogle Scholar
Pickett, M. D. and Williams, R. S., Nanotechnology 23, 215502 (2012).CrossRefGoogle Scholar
Tsuruoka, T., Hasegawa, T., Valov, I., Waser, R., and Aono, M., AIP Adv. 3, 032114 (2013).CrossRefGoogle Scholar
Tsuruoka, T., Hasegawa, T., and Aono, M., unpublished.Google Scholar
Tsuruoka, T., Terabe, K., Hasegawa, T., Aono, M., Nanotechnology 21, 425205 (2010).CrossRefGoogle Scholar
Tsuruoka, T., Terabe, K., Hasegawa, T., Aono, M., Nanotechnology 22, 254013 (2011).CrossRefGoogle Scholar
Schindler, C., Staikov, G., and Waser, R., Appl. Phys. Lett. 94, 072109 (2009).CrossRefGoogle Scholar
Menzel, S., Tappertzhofen, S., Waser, R., and Valov, I., Phys. Chem. Chem. Phys. 15, 6945 (2013).CrossRefGoogle Scholar
Valov, I. and Staikov, G., J. Solid State Electrochem. 17, 365 (2012).CrossRefGoogle Scholar
Budevski, E., Staikov, G., and Lozenz, W. J., Electrochemical Phase Formation and Growth (VCH, Wheinhein, 1996).CrossRefGoogle Scholar
Soni, R., Kamalanthan, D., Ielmini, D., Lacaita, A. L., and Kozicki, M. N., IEEE Trans. Electron Devices 56, 1040 (2009).Google Scholar