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FMR Effects on Integrated Ferromagnetic Thin-film RF Inductors

Published online by Cambridge University Press:  26 February 2011

Weiping Ni ,
Jinsook Kim  and
Edwin Kan
Weiping Ni
Affiliation:
wn25@cornell.edu, Cornell Univ., ECE, 326 Blackstone Ave., Ithaca, NY, 14850, United States
Jinsook Kim
Affiliation:
jk368@cornell.edu, Cornell Univ., ECE, Ithaca, NY, 14853, United States
Edwin Kan
Affiliation:
Kan@ece.cornell.edu, Cornell Univ., ECE, Ithaca, NY, 14853, United States
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Abstract

Ferromagnetic inductors with various geometries and permalloy thin film patterns were fabricated on the standard silicon substrate with a fully CMOS compatible process. The ferromagnetic resonance effects on the inductors were studied with the applied magnetic fields in different orientations. It showed that with the properly applied magnetic field, the ferromagnetic resonance for the patterned permalloy thin films can be pushed higher and the maximum quality factor for the ferromagnetic inductors can be improved. However, because the relative permeability decreases with increasing applied field, the trade-off between the effective inductance and the quality factor needs to be optimized for the practical designs.

Keywords

ferromagneticalloyfilm
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 984: Symposium MM – Magnetic Resonance in Material Science , 2006 , 0984-MM15-02
Copyright
Copyright © Materials Research Society 2007

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References

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