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Dynamic Behavior of Intrinsic Point Defects in Fz and Cz Silicon Crystals

Published online by Cambridge University Press:  03 September 2012

Takao Abe  and
Hiroshi Takeno
Takao Abe
Affiliation:
Shin-Etsu Handotai, Isobe, Annaka, Gunma 379–01
Hiroshi Takeno
Affiliation:
Shin-Etsu Handotai, Isobe, Annaka, Gunma 379–01
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Abstract

Detaching the crystals from the melt revealed the real state and dynamic change of intrinsic point defects. From this observation it is confirmed that the predominant point defects near the melting point are vacancies. Clusters of interstitial-type dislocation loops (CDL) are eliminated by taking an extremely low growth rate under 0.2 mm/min and nitrogen doping. The anomalous oxygen precipitate (AOP) of the crystals grown in a nitrogen ambient is enhanced. AOP and ring-oxidation induced stacking fault (R-OSF) coexist at the periphery in nitrogen doped crystals. Almost all crystals have defect boundaries between periphery and center region which may be attributed to a stress field in the crystals during growth.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 262: Symposium E – Defect Engineering in Semiconductor Growth, Processing and Device Technology , 1992 , 3
Copyright
Copyright © Materials Research Society 1992

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References

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