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Simulations of an Interface Crack Nucleation During Nanoindentaion : Molecular Dynamics and Finite Element Coupling Approach

Published online by Cambridge University Press:  01 February 2011

Shotaro Hara ,
Satoshi Izumi ,
Shinsuke Sakai ,
Yoshiyuki Eguchi  and
Tomio Iwasaki
Shotaro Hara
Affiliation:
hara.shotaro@fml.t.u-tokyo.ac.jp, The university of Tokyo, Mechanical Engineering, Hongo7-3-1,Bunkyo-ku, Tokyo, N/A, Japan
Satoshi Izumi
Affiliation:
izumi@fml.t.u-tokyo.ac.jp, The University of Tokyo, Mechanical Engineering, Hongo7-3-1, Bunkyo-ku, Tokyo, N/A, Japan
Shinsuke Sakai
Affiliation:
sakai@fml.t.u-tokyo.ac.jp, The University of Tokyo, Mechanical Engineering, Hongo7-3-1, Bunkyo-ku, Tokyo, N/A, Japan
Yoshiyuki Eguchi
Affiliation:
yoshiyuki.eguchi.cz@hitachi.com, Hitachi East Japan Solutions, Ltd, Ibaraki, N/A, Japan
Tomio Iwasaki
Affiliation:
tomio.iwasaki.ka@hitachi.com, Hitach, Ltd, Ibaraki, N/A, Japan
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Abstract

We carried out the nanoindentation simulations for the Ru (superlayer) / Cu (film) / SiO2 (substrate) system using the finite temperature MD-FEM coupling method. The calculations are performed for the different adhesion energies of Cu/SiO2 ranging from 0.2 to 0.6 J/m2. During loading, it was found that the interfacial crack nucleation occurs at three to four times the contact radius, driven by the tensile stress acted on the Cu/SiO2 interface. We also show that the asymmetric defect behavior have a great effect on giving birth to the crack nucleation. The observation of our simulation indicates that the mechanism of the crack nucleation strongly depends on the interfacial bonding energy.

Keywords

dislocationsnanoscalenano-indentation
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1086: Symposium U – Mechanics of Nanoscale Materials , 2008 , 1086-U08-29
Copyright
Copyright © Materials Research Society 2008

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