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Effects of Pre-Gate Oxidation Intrinsic Gettering Upon Thin Gate Oxide Integrity In High Carbon Content CZ Si

Published online by Cambridge University Press:  22 February 2011

S. Hahn ,
C. Y. Tung ,
J. Lee ,
T. Tuomi  and
J. Partanen
S. Hahn
Affiliation:
Siltec Silicon, Menlo Park, CA 94025
C. Y. Tung
Affiliation:
Integrated Device Technology, Inc., Santa Clara, CA 95051
J. Lee
Affiliation:
Integrated Device Technology, Inc., Santa Clara, CA 95051
T. Tuomi
Affiliation:
Laboratory of Physics, Helsinki University of Technology, SF-02150 Espoo, Finland
J. Partanen
Affiliation:
Laboratory of Physics, Helsinki University of Technology, SF-02150 Espoo, Finland
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Abstract

Effects of post-well drive intrinsic gettering (PWIG) upon the integrity of thin gate oxide in Cz Si wafers with carbon levels, Cs, ranged from 0.2 - ∼ 4 ppma were investigated. A 10 nm thick gate oxide capacitor was used to study its time-dependent breakdown characteristics and minority carrier lifetime. Our data have shown that PWIG cycles and/or carbon impurity affect both bulk oxygen precipitation and minority carrier lifetime, but not the oxide integrity.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 105: Symposium F – SiO2 and Its Interfaces , 1987 , 103
Copyright
Copyright © Materials Research Society 1988

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References

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