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GaAs Quantum Well Infrared Photodetectors Grown by OMVPE

Published online by Cambridge University Press:  25 February 2011

W. S. Hobson ,
A. Zussman ,
B. F. Levine ,
S. J. Pearton ,
V. Swaminathan  and
L. C. Luther
W. S. Hobson
Affiliation:
AT&T Bell Laboratories, Murray Hill, New Jersey 07974
A. Zussman
Affiliation:
AT&T Bell Laboratories, Murray Hill, New Jersey 07974
B. F. Levine
Affiliation:
AT&T Bell Laboratories, Murray Hill, New Jersey 07974
S. J. Pearton
Affiliation:
AT&T Bell Laboratories, Murray Hill, New Jersey 07974
V. Swaminathan
Affiliation:
AT&T Bell Laboratories, Breinigsville, PA 18031
L. C. Luther
Affiliation:
AT&T Bell Laboratories, Breinigsville, PA 18031
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Abstract

We have grown, fabricated, and measured GaAs quantum well infrared photodetectors (QWIPs) using organometallic vapor phase epitaxy (OMVPE). The epitaxial layers were characterized by electrochemical capacitance-voltage profiling, double-crystal X-ray diffraction, cathodoluminescence, and infrared absorption. Dark current, responsivity spectra, and detectivity were measured for the QWIP devices. The performance of these QWIPs was comparable to detectors grown using MBE. This is of importance since OMVPE has advantages for wafer throughout and cost.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 216: Symposium T – Long-Wavelength Semiconductor Devices, Materials and Processes , 1990 , 501
Copyright
Copyright © Materials Research Society 1991

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References

REFERENCES

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