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Local Hysteresis Behavior of Ferroelectric Thin Films of Si added PbTiO3

Published online by Cambridge University Press:  01 February 2011

V. R. Palkar ,
M. Higgins ,
S. C. Purandare ,
R. Pinto  and
S. Bhattacharya
V. R. Palkar
Affiliation:
Tata Institute of Fundamental Research, Mumbai 400005, India
M. Higgins
Affiliation:
NEC Research Institute, Inc. Princeton, New Jercy 08540, U.S.A
S. C. Purandare
Affiliation:
Tata Institute of Fundamental Research, Mumbai 400005, India
R. Pinto
Affiliation:
Tata Institute of Fundamental Research, Mumbai 400005, India
S. Bhattacharya
Affiliation:
Tata Institute of Fundamental Research, Mumbai 400005, India NEC Research Institute, Inc. Princeton, New Jercy 08540, U.S.A
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Abstract

We report ferroelectric properties and local hysteresis behavior of 2 mole percent Si added PbTiO3 thin films grown on Pt/TiO2/SiO2/Si substrate by using pulsed laser deposition technique. The ferroelectric hysteresis loop and scanning piezoresponce images obtained on these films by using AFM with conducting tip demonstrate excellent properties, which are equivalent to any other established ferroelectric material like PZT. Si segregating at the grain boundaries controls grain growth. The grain size and grain boundaries play a crucial role in determining ferroelectric hysteresis properties. The presence of Si in the matrix can be useful in tuning the properties.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 784: Symposium C – Ferroelectric Thin Films XII , 2003 , C11.32
Copyright
Copyright © Materials Research Society 2004

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References

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