Hostname: page-component-8448b6f56d-c4f8m Total loading time: 0 Render date: 2024-04-23T22:32:00.577Z Has data issue: false hasContentIssue false
  • English
  • Français

Gate Current Suppressed Lateral FEAs with Integrated TFTs

Published online by Cambridge University Press:  10 February 2011

Moo-Sup Lim ,
Cheol-Min Park  and
Min-Koo Han
Moo-Sup Lim
Affiliation:
School of Electrical Engineering., Seoul National Univ., Seoul, 151-742, Korea
Cheol-Min Park
Affiliation:
School of Electrical Engineering., Seoul National Univ., Seoul, 151-742, Korea
Min-Koo Han
Affiliation:
School of Electrical Engineering., Seoul National Univ., Seoul, 151-742, KoreaPhone : +82-2-880-7248, Fax : +82-2-873-0827, E-mail : mkh@emlab.snu.ac.kr
Get access

Abstract

Lateral FEAs which have three terminals, stable anode current, and suppressed gate current are proposed and fabricated. In order to eliminate the path of electrons between tips and anode, the proposed FEAs are sealed by evaporation of oxide while Molybdenium in our privious work. Experimental results such as controllibility of gate electrode, a portion of the gate current for the anode current, and stability of the anode current are given. The proposed FEAs exhibit an excellent controllibility by gate electrode and stability of the emission current. The gate current of new FEAs is negligible compared with the ande current while that of the privious FEAs is about 20% of the anode current.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 558: Symposium B – Flat-Panel Displays and Sensors-Principles, Materials… , 1999 , 143
Copyright
Copyright © Materials Research Society 2000

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Yokoo, K., Arai, M., Mori, M., Bae, J., and Ono, S., J. Vac. Sci. Technol. B 13(2), Mar/Apr, pp. 491 (1995)Google Scholar
2. Arai, M., Kitano, N., Shimawaki, H., Mimura, H., and Yokoo, K., Tech. Dig. 10th Int. Vacuum Microelectronics Conf. pp. 38 (1997)Google Scholar
3. Hashiguchi, G., Mimura, H., and Hugita, H., Jpn. J. Appl. Phys. Vol. 35, pp L84 (1996)Google Scholar
4. Lim, M. S., park, C.M., Han, M. K., and Choi, Y. I., MRS Symposium Proceeding, vol. 509, Material issues in Vacuum Microelectronics, pp. 9 (1998)Google Scholar
5. Park, C. M., Lim, M. S., and Han, M. K., IEEE Electron Device Letters, vol. 18, no. 11, November, pp. 538 (1997)Google Scholar
6. Lim, M. S., park, C.M., Han, M. K., and Choi, Y. I., Tech. Dig. 11th Int. Vacuum Microelectronics Conf. pp. 302 (1998)Google Scholar