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Low Frequency Noise In n-Type Gallium Nitride

Published online by Cambridge University Press:  10 February 2011

N. Dyakonova ,
M. Levinshtein ,
S. Contreras ,
W. Knap ,
B. Beaumont  and
P. Gibart
N. Dyakonova
Affiliation:
A.F. Ioffe Physical-Technical Institute, 194021, St. Petersburg, Russia.
M. Levinshtein
Affiliation:
A.F. Ioffe Physical-Technical Institute, 194021, St. Petersburg, Russia.
S. Contreras
Affiliation:
G.E.S., UMR-CNRS 5650, cc 074, Universite Montpellier II, Montpellier, France.
W. Knap
Affiliation:
G.E.S., UMR-CNRS 5650, cc 074, Universite Montpellier II, Montpellier, France.
B. Beaumont
Affiliation:
CRHEA, rue Bernard Gregory, F-06560 Valbonne, France.
P. Gibart
Affiliation:
CRHEA, rue Bernard Gregory, F-06560 Valbonne, France.
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Abstract

Low frequency noise has been investigated in hexagonal n-type GaN with equilibrium electron concentration n ∼ 1017 cm−3 at T=300 K. The frequency and temperature dependencies of the spectral density of the current noise, SI, have been studied in the frequency range f from 20 Hz to 20 kHz. Over the whole temperature range from T=80K to 400K the SI(f) dependence is very close to 1/f. The value of the Hooge constant, α, is very large: α ∼ 5 – 7 and is found to be temperature independent. The effects of illumination on the low frequency noise in GaN are studied for the first time. The noise is unaffected by illumination with photon energy Eph < Eg, while band-to band illumination (Eph∼Eg ) influences the low frequency noise, increasing the noise at higher temperatures, and decreasing it at lower temperatures.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 512: Symposium F – Wide Bandgap Semiconductors for High Power, High Frequency , 1998 , 21
Copyright
Copyright © Materials Research Society 1998

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References

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