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Near-Room Temperature Deposition of W and WO3 Thin Films by Hydrogen Atom Assisted Chemical Vapor Deposition

Published online by Cambridge University Press:  15 February 2011

Wei William Lee  and
Robert R. Reeves
Wei William Lee
Affiliation:
IBM Research Division, Almaden Research Center, San Jose, CA 95120-6099
Robert R. Reeves
Affiliation:
Department of Chemistry, Rensselaer Polytechnic Institute, Troy, NY 12180-3590
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Abstract

A novel near-room temperature CVD process has been developed using H-atoms reaction with WF6 to produce tungsten and tungsten oxide films. The chemical, physical and electrical properties of these films were studied. Good adhesion and low resistivity of W films were measured. Conformal W03 films were obtained on columnar tungsten using a small amount of molecular oxygen in the gas stream. A reaction mechanism was evaluated on the basis of experimental results. The advantages of the method include deposition of adherent films in a plasma-free environment, near-room temperature, with a low level of impurity

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 250: Symposium R – Chemical Vapor Deposition of Refractory Metals and Ceramics II , 1991 , 137
Copyright
Copyright © Materials Research Society 1992

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