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Measurements of Residual Stresses in Low-Stress Silicon Nitride Thin Films Using Micro-Rotating Structures

Published online by Cambridge University Press:  15 February 2011

Xin Zhang ,
Yitshak Zohar  and
Tong-Yi Zhang
Xin Zhang
Affiliation:
Department of Mechanical Engineering, Hong Kong University of Science and Technology, Clear Water Bay, Kowloon, Hong Kong.
Yitshak Zohar
Affiliation:
Department of Mechanical Engineering, Hong Kong University of Science and Technology, Clear Water Bay, Kowloon, Hong Kong.
Tong-Yi Zhang
Affiliation:
Department of Mechanical Engineering, Hong Kong University of Science and Technology, Clear Water Bay, Kowloon, Hong Kong.
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Abstract

A variety of rotating micro structures were designed, fabricated and characterized for residual-stress (or strain) measurements in low-stress silicon nitride thin films, deposited by LPCVD on silicon wafers. The sensitivities of the micro structures were calculated by finite element method (FEM) and verified experimentally. The results were further confirmed by utilizing the wafer-curvature method for stress measurements. The size of the structures enables local residual-stress (or strain) measurement. The stress level depends on both the film thickness and the gas ratio and also varies with the location on the wafer.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 444: Symposium I – Materials for Mechanical and Optical Microsystems , 1996 , 111
Copyright
Copyright © Materials Research Society 1997

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