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Boron Doping of Microcrystalline and Nanocrystalline Diamond Films: Where is the Boron Going?

Published online by Cambridge University Press:  01 February 2011

Paul William May ,
William J Ludlow ,
Matthew Hannaway ,
James A Smith ,
Keith N Rosser  and
Peter J Heard
Paul William May
Affiliation:
paul.may@bris.ac.uk, University of Bristol, School of Chemistry, Cantock's Close, Bristol, BS8 1TS, United Kingdom, +44 (0)117 9289927, +44 (0)117 9251295
William J Ludlow
Affiliation:
w.j.ludlow@bris.ac.uk, University of Bristol, School of Chemistry, Cantock's Close, Bristol, BS8 1TS, United Kingdom
Matthew Hannaway
Affiliation:
m.hannaway@bris.ac.uk, University of Bristol, School of Chemistry, Cantock's Close, Bristol, BS8 1TS, United Kingdom
James A Smith
Affiliation:
james.smith@bris.ac.uk, University of Bristol, School of Chemistry, Cantock's Close, Bristol, BS8 1TS, United Kingdom
Keith N Rosser
Affiliation:
Keith.Rosser@bristol.ac.uk, University of Bristol, School of Chemistry, Cantock's Close, Bristol, BS8 1TS, United Kingdom
Peter J Heard
Affiliation:
Peter.Heard@bristol.ac.uk, University of Bristol, Interface Analysis Centre, 121 St. Michael's Hill, Bristol, BS2 8BS, United Kingdom
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Abstract

We present data showing how the electrical conductivity and Raman spectra of boron doped ‘cauliflower’-type nanocrystalline (c-NCD) CVD diamond films vary as a function of B content. The conductivity is roughly linear as a function of B content between an onset threshold of ∼5×1020 cm−3 up to ∼6×1021 cm−3, with the higher concentrations giving near metallic conductivity values. The onset threshold may be due to compensating donors due to the large number of impurities and defects in these films. The position of the Lorentzian contribution to the 500 cm−1 Raman feature was used to estimate the B content and compared to the value measured using SIMS. We found that the Raman method overestimated the concentration of B by a factor of ∼5 for these c-NCD films. The shortfall may be explained if only a small fraction of the B found in the small-grained films is being incorporated into substitutional sites. We conclude that in diamond films with a high concentration of grain boundaries, the majority of the B (80% in some cases) must be present at or in the grain boundaries.

Keywords

diamonddopantnanoscale
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1039: Symposium P – Diamond Electronics–Fundamentals to Applications II , 2007 , 1039-P17-03
Copyright
Copyright © Materials Research Society 2008

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