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Field Emission from Low Temperature Carbon Coated Silicon Tips

Published online by Cambridge University Press:  10 February 2011

A.I. Kosarev ,
V.V. Zhirnov ,
A.J. Vinogradov ,
M.V. Shutov ,
L.V. Bormatova ,
E.I. Givargizov  and
T.E. Felter
A.I. Kosarev
Affiliation:
A.F.Ioffe Phys.-Technical Institute, St.-Petersburg, 194021, Russia
V.V. Zhirnov
Affiliation:
Institute of Crystallography, Moscow, 117333, Russia
A.J. Vinogradov
Affiliation:
A.F.Ioffe Phys.-Technical Institute, St.-Petersburg, 194021, Russia
M.V. Shutov
Affiliation:
A.F.Ioffe Phys.-Technical Institute, St.-Petersburg, 194021, Russia
L.V. Bormatova
Affiliation:
Moscow State Academy of Fine Chemical Technology, Moscow 117571, Russia
E.I. Givargizov
Affiliation:
Institute of Crystallography, Moscow, 117333, Russia
T.E. Felter
Affiliation:
Sandia National Laboratories, Livermore, CA 94550, USA
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Abstract

Field emission from silicon tips with carbon coatings deposited by VHF CVD at low temperature, Ts=225°C, has been studied. Emission was measured from both single tips and tip arrays. Structure and electronic properties of the films have been characterized. Significant effects due to pregrowth plasma treatment of the sample surface were observed on microstructure and emission characteristics. Optimized carbon coatings on silicon tips increased emission current by about two orders and reduced the threshold field to 0.1 V/μm.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 509: Symposium C – Materials Issues in Vacuum Microelectronics , 1998 , 89
Copyright
Copyright © Materials Research Society 1998

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