Hostname: page-component-76fb5796d-qxdb6 Total loading time: 0 Render date: 2024-04-25T09:24:33.795Z Has data issue: false hasContentIssue false
  • English
  • Français

High Deposition Rate a-Si:H for the Flat Panel Display Industry

Published online by Cambridge University Press:  10 February 2011

J. Hautala ,
Z. Saleh ,
J. F. M. Westendorp ,
H. Meiling ,
S. Sherman  and
S. Wagner
J. Hautala
Affiliation:
Tokyo Electron America, 123 Brimbal Ave, Beverly MA 01915
Z. Saleh
Affiliation:
Tokyo Electron America, 123 Brimbal Ave, Beverly MA 01915
J. F. M. Westendorp
Affiliation:
Tokyo Electron America, 123 Brimbal Ave, Beverly MA 01915
H. Meiling
Affiliation:
Utrecht University, P.O. Box 80000 3508 TA, Utrecht, The Netherlands
S. Sherman
Affiliation:
Department of Electrical Engineering, Princeton University, Princeton NJ 08544
S. Wagner
Affiliation:
Department of Electrical Engineering, Princeton University, Princeton NJ 08544
Get access

Abstract

High deposition rates and good quality electrical properties and thickness uniformities over large areas are required for all three films (SiNx, a-Si:H and n+ a-Si:H) composing the thin film transistors (TFTs) for the AMLCD industry, while maintaining high tool up-time and low particle formation. Generally these conditions have been achieved for most single-panel multichamber PECVD systems; however, it has become increasingly apparent that a compromise is drawn between the TFT mobility and the deposition rate of the a-Si:H layer. Thus it becomes essential to clearly assess the industry requirements for both deposition rates as well as TFT performance for the different device structures used for AMLCDs, and to discover and control these underlying material properties.

The TEL VHF (40/60 MHz) PECVD system produces high quality, low defect density a- Si:H at deposition rates exceeding 1500 Å/min when analyzed by FTIR, CPM, photo and dark conductivity. Even though the low deposition rate a-Si:H exhibits very similar bulk properties, higher mobility TFTs are produced with a-Si:H deposited at lower RF power. Having both a high ion flux and low ion energy in the SiH4 discharge are likely the most critical conditions for controlling the a-Si:H quality and thus the TFT mobility. Increasing the RF frequency enhances both of these effects, as well as provides a higher deposition rate for a given power density and a higher power threshold for particle/powder formation. For these reasons it is likely a 40/60 MHz plasma will produce better performing TFTs for a given deposition rate when compared with a conventional 13.56 MHz system. Other process conditions such as diluting the SiH4 in H2 or Ar also seem to play an important role in the optoelectronic properties of the a-Si:H film and ultimately the TFT performance.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 424: Symposium H – Flat Panel Display Materials II , 1996 , 9
Copyright
Copyright © Materials Research Society 1997

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1. Westendorp, J. F. M., Meiling, H., Pollock, J.D., Berrian, D.W., Laflamme, A.H. Jr, Hautala, J. and Vanderpot, J., in Flat Panel Display Materials, edited by Batey, J., Chiang, A. and Holloway, P.H. (Mat. Res. Soc. Symp. Proc. 345, Pittsburgh, PA, 1994) p. 175.Google Scholar
2. Perrin, J., in Plasma Deposition of Amorphous Silicon-based Materials, edited by Bruno, G., Capezzuto, P. and Madan, A., Academic Press, 1995, pp.216–18.Google Scholar
3. Curtins, H., Wyrsch, N., Favre, M. and Shaw, A.V., Plasma Chem. Plasma Process. 7 (3). 267, (1987).Google Scholar
4. Sherman, S. and Wagner, S., AMLCDs ‘95 Workshop, Bethlehem, PA (1995)Google Scholar
5. Howard, W.E., J. of the SID, 3, #3, 127 (1995)Google Scholar
6. Ibaraki, N., Matsumura, K., Fukuda, K., Hirata, N., Kawamura, S. and Kashiro, T., in 1994 Display Manufacturing Technology Conference (Society for Information Display, Playa del Rey, CA, 1994), pp. 121–2.Google Scholar
7. Cabarrocas, P. Roca i, J. Non-Cryst. Solids 164–166. 37 (1993).Google Scholar
8. Miyashita, H. and Watabe, Y., IEEE Trans. Electron Dev. 41, 499 (1994).Google Scholar
9. Kuo, Y., in Amorphous Silicon Technology - 1995, edited by Hack, M., Schiff, E.A., Madan, A., Powell, M. and Matsuda, A., (Mat. Res. Soc. Symp. Proc. 377, Pittsburgh, 1995) p. 701.Google Scholar
10. Meiling, H., Westendorp, J.F.M., Hautala, J., Saleh, Z.M. and Malone, C.T. in Flat Panel Display Materials, edited by Batey, J., Chiang, A. and Holloway, P.H. (Mat. Res. Soc. Symp. Proc. 345, Pittsburgh, PA, 1994) p. 65.Google Scholar
11. Sherman, S., Lu, P.Y., Gottscho, R.A. and Wagner, S., in Amorphous Silicon Technology - 1995, edited by Hack, M., Schiff, E.A., Madan, A., Powell, M. and Matsuda, A., (Mat. Res. Soc. Symp. Proc. 377, Pittsburgh, PA 1995) p. 749.Google Scholar
12. Dorier, J.L., Hollenstein, C., Howling, A.A. and Kroll, U., J. Vac. Sci. Technol. A 10 (4) 1048 (1992).Google Scholar
13. Uchida, H., Takechi, K., Nishida, S. and Kanecko, S, Jpn. J. Appl. Phys. 30 (12B), 3691 (1991).Google Scholar
14. Vanecek, M., Kocka, J., Stuchlik, J., Kozisek, Z., Stika, O. and Triska, A., Solar Energy Mat., 8, 411 (1983).Google Scholar