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Parasitic Reactions between Alkyls and Ammonia in OMVPE

Published online by Cambridge University Press:  21 February 2011

C.H Chen ,
H. Liu ,
D. Steigerwald ,
W. Imler ,
C.P. Kuo  and
M.G Craford
C.H Chen
Affiliation:
Hewlett-Packard Optoelectronics Division, San Jose, CA 95131; changhua_chen@sj.hp.com
H. Liu
Affiliation:
Hewlett-Packard Optoelectronics Division, San Jose, CA 95131; changhua_chen@sj.hp.com
D. Steigerwald
Affiliation:
Hewlett-Packard Optoelectronics Division, San Jose, CA 95131; changhua_chen@sj.hp.com
W. Imler
Affiliation:
Hewlett-Packard Optoelectronics Division, San Jose, CA 95131; changhua_chen@sj.hp.com
C.P. Kuo
Affiliation:
Hewlett-Packard Optoelectronics Division, San Jose, CA 95131; changhua_chen@sj.hp.com
M.G Craford
Affiliation:
Hewlett-Packard Optoelectronics Division, San Jose, CA 95131; changhua_chen@sj.hp.com
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Abstract

The parasitic reactions between ammonia and commonly used alkyls have been studied in a horizontal OMVPE reactor. The results indicate that parasitic reactions between TMA1 and NH3 is severe, leading to the necessity to grow A1N at low reactor pressure. On the other hand, parasitic reactions between TMGa+NH3 and TMIn+NH3 are not significant and it is possible to grow GaN and GaInN at any reactor pressure.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 395: Symposium AAA – Gallium Nitride and Related Materials: The First International Symp , 1995 , 103
Copyright
Copyright © Materials Research Society 1996

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References

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