Hostname: page-component-76fb5796d-r6qrq Total loading time: 0 Render date: 2024-04-25T19:46:36.205Z Has data issue: false hasContentIssue false
  • English
  • Français

Fs Spectroscopy of Phonon Emission and Absorption for A Cold Plasma in Gallium Arsenide

Published online by Cambridge University Press:  15 February 2011

A. Agnesi ,
A. Cavalleri ,
A.M. Malvezzi  and
G.C. Reali
A. Agnesi
Affiliation:
Dipartimento di Elettronica, Universita’ di Pavia, Via Ferrata 1, 127100 Pavia, Italy
A. Cavalleri
Affiliation:
Dipartimento di Elettronica, Universita’ di Pavia, Via Ferrata 1, 127100 Pavia, Italy
A.M. Malvezzi
Affiliation:
Dipartimento di Elettronica, Universita’ di Pavia, Via Ferrata 1, 127100 Pavia, Italy
G.C. Reali
Affiliation:
Dipartimento di Elettronica, Universita’ di Pavia, Via Ferrata 1, 127100 Pavia, Italy
Get access

Abstract

Degenerate pump and probe measurements on bulk GaAs <100> surfaces with sub-100 fs near infrared laser pulses have been performed in the 0.8 − 3 × 1017 carriers cm-3 excitation range at room temperature. Transient reflectivity data reveal the progressive extinction of the LO-phonon emission channel when the excess excitation energy is decreased. At these wavelengths and for low excitation levels, acoustic phonon absorption from conduction band minimum is observed. Surface recombination rates are deduced from the picosecond evolution of the reflectivity.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 397: Symposium B – Advanced laser Processing of Materials-Fundamentals and Applications , 1995 , 21
Copyright
Copyright © Materials Research Society 1996

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

BIBLIOGRAPHY

1 Auston, D. H., McAfee, S., Shank, C. V., Ippen, E. P., Teschke, O., Solid State Electronics 21, 147, (1978).Google Scholar
2 Shank, C. V., Fork, R. L., Leheny, R. F., Shah, J., Physical Review Letters 42, 112, (1979)Google Scholar
3 Lin, W.Z., Fujimoto, J.G., Ippen, E.P., Logan, R.A., Applied Physics Letters 50, 124, (1987)Google Scholar
4 Becker, P. C., Fragnito, H. L., Brito Cruz, C. H., Shah, J., Fork, R. L., Cunningham, J. E., Henry, J. E., Shank, C. V., Applied Physics letters 53, 2089 (1988).Google Scholar
5 Taylor, A. J., Erskine, D. J., Tang, C. L. JOSA B 2, 663, (1985)Google Scholar
6 Kash, J.A., Tsang, J.C., Hvam, J.H., Physical Review Letters 54, 2151, (1985)Google Scholar
7 Blakemore, S. Journal of Applied Physics 53, 123, (1982).Google Scholar
8 van Driel, H. M. Physical Review B 35, 8166, (1987)Google Scholar
9 Pelouch, W. S. and Schlie, L.A. Applied Physics Letters 66, 82, (1994)Google Scholar
10 Mak, G. and van Driel, H.M. Applied Physics letters 66, 763, (1995).Google Scholar
11 Marvin, D.C., Beck, S.M., Wessel, J.E., Rollins, J.G. IEEE Journal of Quantum Eectronics 25, 1064, (1989).Google Scholar
12 Tommasi, R., Langot, P., and Vallee, F. Applied Physics Letters 66, 1361 (1995)Google Scholar