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Uniaxial Stress Applied To p-Type GaAs/AlGaAs Heterostructures: Influence on Heavy Hole Subbandsau

Published online by Cambridge University Press:  15 February 2011

Ole P. Hansen ,
Janus S. Olsen ,
W. Kraak ,
B. Saffian ,
N. Minina  and
A. Savin
Ole P. Hansen
Affiliation:
Niels Bohr Institute, University of Copenhagen, Universitetsparken 5, 2100 Copenhagen, Denmark
Janus S. Olsen
Affiliation:
Niels Bohr Institute, University of Copenhagen, Universitetsparken 5, 2100 Copenhagen, Denmark
W. Kraak
Affiliation:
Institute of Physics. Humboldt University, Invalidenstrasse 110, 10115 Berlin, Germany
B. Saffian
Affiliation:
Institute of Physics. Humboldt University, Invalidenstrasse 110, 10115 Berlin, Germany
N. Minina
Affiliation:
Department of Low Temperature Physics, Moscow State University, Lenin Hills, 119899 Moscow, Russia
A. Savin
Affiliation:
Department of Low Temperature Physics, Moscow State University, Lenin Hills, 119899 Moscow, Russia
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Abstract

Quantum Hall effect and Shubnikov-de Haas oscillations in a 2D hole gas at a p-GaAs/Al0.5Ga0 5As (001) interface show, that under in-plane (110) uniaxial compression a redistribution of carriers between the two spin-splitted subbands of the ground heavy hole state takes place. At the maximal compression of 2.5 kbar the carrier density of the most populated subband is decreased by 18%, while the total carrier density remains almost unchanged. A decrease of the spin-splitting under the uniaxial compression is proposed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 405: Symposium K – Surface/Interface and Stress Effects in Electronic Materials Nanostructures , 1995 , 43
Copyright
Copyright © Materials Research Society 1996

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