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Si Single-Electron SOI-MOSFETs: Interplay with Individual Dopants and Photons

Published online by Cambridge University Press:  01 February 2011

Michiharu Tabe ,
Zainal Arif Burhanudin ,
Ratno Nuryadi ,
Daniel Moraru ,
Maciej Ligowski ,
Ryszard Jablonski  and
Takeshi Mizuno
Michiharu Tabe
Affiliation:
romtabe@rie.shizuoka.ac.jp, United States
Zainal Arif Burhanudin
Affiliation:
zainabh@petronas.com.my, Shizuoka University, Research Institute of Electronics, Hamamatsu, Japan
Ratno Nuryadi
Affiliation:
ratnon@gmail.com, Shizuoka University, Research Institute of Electronics, Hamamatsu, Japan
Daniel Moraru
Affiliation:
daniel@rie.shizuoka.ac.jp, Shizuoka University, Research Institute of Electronics, Hamamatsu, Japan
Maciej Ligowski
Affiliation:
maciej@ligowski.com, Shizuoka University, Research Institute of Electronics, Hamamatsu, Japan
Ryszard Jablonski
Affiliation:
r.jablonski@mchtr.pw.edu.pl, Wasaw Institute of Technology, Warsaw, Poland
Takeshi Mizuno
Affiliation:
mizuno@rie.shizuoka.ac.jp, Shizuoka University, Research Institute of Electronics, Hamamatsu, Japan
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Abstract

We have demonstrated that Si single-electron or single-hole SOI-MOSFETs with the multi-dots channel have attractive new functions such as photon detection and single-electron transfer. Multi-dots formed by selective-oxidation-induced patterning of the thin SOI layer have been used in the experiments of photon detection, while, most recently, we have utilized smaller dots consisting of individual dopant potentials in single electron transfer devices. Furthermore, in order to directly observe spatial landscape of single charges in the channel region, we have developed Low Temperature-Kelvin Probe Force Microscopy and succeeded in detecting single-dopant potential in the channel region. In this paper, photon detection by these devices will be primarily described.

Keywords

Siopticaldevices
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1145: Symposium MM – Application of Group IV Semiconductor Nanostructures , 2008 , 1145-MM10-01
Copyright
Copyright © Materials Research Society 2009

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References

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