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Structural and Electronic Properties of Rare-Earth Nanowires

Published online by Cambridge University Press:  01 February 2011

Andrew Pratt ,
Charles Woffinden ,
Christopher Bonet  and
Steve P. Tear
Andrew Pratt
Affiliation:
ap140@york.ac.uk, University of York, Physics, York, United Kingdom
Charles Woffinden
Affiliation:
cww501@york.ac.uk, University of York, Physics, York, N. Yorks., United Kingdom
Christopher Bonet
Affiliation:
cb38@york.ac.uk, University of York, Physics, York, N. Yorks., United Kingdom
Steve P. Tear
Affiliation:
spt1@york.ac.uk, University of York, Physics, York, N. Yorks., United Kingdom
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Abstract

Sub-monolayer coverages of the rare-earth metal Ho were deposited onto Si(001) substrates at elevated temperatures resulting in the formation of rare-earth silicide nanowires. Between the nanowires the substrate area reconstructs into either a 2×4 or 2×7 reconstruction depending on the specific preparation conditions. We have studied the structural and electronic properties of both the nanowires and the reconstructed areas with the complementary techniques of scanning tunneling microscopy (STM) and metastable de-excitation spectroscopy (MDS) revealing the electronic similarities between the 2×4 and 2×7 phases. Evidence for the presence of hybridized Si 3s3p-Ho 6s5d bonds suggests that these reconstructions form as a precursor to nanowire growth.

Keywords

Hoscanning tunneling microscopy (STM)nanoscale
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1144: Symposium LL – Nanowires–Systhesis, Properties, Assembly and Applications , 2008 , 1144-LL04-24
Copyright
Copyright © Materials Research Society 2009

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References

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