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Electronic Properties of InP(100)-(1×1)-S Surface

Published online by Cambridge University Press:  21 February 2011

Y. Tao ,
A. Yelon ,
E. Sacher  and
R. Leonelli
Y. Tao
Affiliation:
Groupe de Recherche en Physique et Technologie des Couches Minces and Ddpartement de Génie Physique, Ecole Polytechnique de Montreal, C. P. 6079, Succ.“A”, Montreal, Qudbec, H3C 3A7, Canada
A. Yelon
Affiliation:
Groupe de Recherche en Physique et Technologie des Couches Minces and Ddpartement de Génie Physique, Ecole Polytechnique de Montreal, C. P. 6079, Succ.“A”, Montreal, Qudbec, H3C 3A7, Canada
E. Sacher
Affiliation:
Groupe de Recherche en Physique et Technologie des Couches Minces and Ddpartement de Génie Physique, Ecole Polytechnique de Montreal, C. P. 6079, Succ.“A”, Montreal, Qudbec, H3C 3A7, Canada
R. Leonelli
Affiliation:
Groupe de Recherche en Physique et Technologie des Couches Minces and Département de Physique, l'Université de Montréal, C. P. 6128, Succ.“A”, Montréal, Quebec, H3C 3J7, Canada
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Abstract

X-ray photoelectron spectroscopy was used to estimate the surface Fermi level position at S-passivated InP samples. Low temperature band edge photoluminescence intensity and Schottky diode current-voltage characteristic measurements were used to investigate the surface electronic properties of S-passivated InP. The results show that surface electronic properties were greatly improved by the S-passivation. The passivated InP samples have good resistance to heat treatment, and to the formation of non-radiative recombination centers. The barrier height and ideality factor of Schottky diodes were improved by the passivation. These superior surface electronic properties are attributed to the formation of strong and stable S-In bridge bonds on the passivated InP surfaces.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 315: Symposium Y – Surface Chemical Cleaning and Passivation for Semiconductor Processing , 1993 , 151
Copyright
Copyright © Materials Research Society 1993

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References

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