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Double Channel AlGaN/GaN Heterostructure Field Effect Transistor

Published online by Cambridge University Press:  10 February 2011

R. Gaska ,
M. S. Shur ,
J. W. Yang  and
T. A. Fjeldly
R. Gaska
Affiliation:
APA Optics, Inc., 2950 N. E. 84th Lane, Blaine, MN 55449, remis@apaoptics.com
M. S. Shur
Affiliation:
APA Optics, Inc., 2950 N. E. 84th Lane, Blaine, MN 55449, remis@apaoptics.com
J. W. Yang
Affiliation:
APA Optics, Inc., 2950 N. E. 84th Lane, Blaine, MN 55449, remis@apaoptics.com
T. A. Fjeldly
Affiliation:
APA Optics, Inc., 2950 N. E. 84th Lane, Blaine, MN 55449, remis@apaoptics.com
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Abstract

We report on a Double Channel A1GaN/GaN Heterostructure Field Effect Transistor, where the bottom channel is formed by a GaN-AlGaN-GaN Semiconductor-Insulator-Semiconductor structure. The series resistance for the bottom channel is strongly dependent on the drain bias. This new design demonstrates that the current carrying capability of AlGaN/GaN HFETs can be enhanced using multi channel structures.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 512: Symposium F – Wide Bandgap Semiconductors for High Power, High Frequency , 1998 , 9
Copyright
Copyright © Materials Research Society 1998

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References

REFERENCES

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