Hostname: page-component-7c8c6479df-8mjnm Total loading time: 0 Render date: 2024-03-28T12:47:46.156Z Has data issue: false hasContentIssue false

Sem-Based Characterization Techniques

Published online by Cambridge University Press:  25 February 2011

Phillip E. Russell*
Affiliation:
Materials Engineering Dept., North Carolina State University, Raleigh, NC 27695–7907
Get access

Abstract

The scanning electron microscope is now a common instrument in materials characterization laboratories. The basic role of the SEM as a topographic imaging system has steadily been expanding to include a wide variety of SEM-based analytical techniques. These techniques cover the range of basic semiconductor materials characterization to live-time device characterization of operating LSI or VLSI devices. This paper will introduce many of the more commonly used techniques, describe the modifications or additions to a conventional SEM required to utilize the techniques, and give examples of the use of such techniques. First, the types of signals available from a sample being irradiated by an electron beam will be reviewed. Then, where applicable, the type of spectroscopy or microscopy which has evolved to utilize the various signal types will be described. This will be followed by specific examples of the use of such techniques to solve problems related to semiconductor technology. Techniques to be emphasized will include: x-ray fluorescence spectroscopy, electron beam induced current (EBIC), stroboscopic voltage analysis, cathodoluminescence and electron beam IC metrology. Current and future trends of some of these techniques, as related to the semiconductor industry, will be discussed.

Type
Articles
Copyright
Copyright © Materials Research Society 1986

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1. Goldstein, J. I. and Yakowitz, H.,, Practical Scanning Electron Microscopy, (Plenum Press, New York, 1975).Google Scholar
2. Menzel, E. and Kubalek, E., Scanning 55, 103 (1983).CrossRefGoogle Scholar
3. Holloway, P. H., SEM/Il, 1978, 361.Google Scholar
4. Heinrich, K.F.J., Electron Beam X-ray Microanalysis, (Van Nostran Reinhold, New York, 1981).Google Scholar
5. Yacobi, B. G. andHolt, D. B.,J. Appl. Phys. 59(4), R1 (1986).Google Scholar
6. Leamy, H. J., J. Appl. Phys., 53 (6), pp R61R80 (1981).Google Scholar
7. Russell, P. E. and Herrington, C.R., SEM/III, 1982, pp 1077–1083.Google Scholar
8. Moore, T. M., J. Vac. Sci. Technol. A1 (3), pp 16511655 (1983).CrossRefGoogle Scholar
9. Balk, L. J., Kubalek, E., and Menzel, E., IEEE Trans, Electr. Dev. ED-27, 9, pp 707711, (1975).Google Scholar
10. Raoul, A., andDavidson, S. M., SEM/I, 1977, pp 225–231.Google Scholar
11. Jones, G.A. C., Nay, B. R. andGopinath, A., SEM, 1973, pp 309–316.CrossRefGoogle Scholar
12. Davidson, S. M., and Vaidya, A. W., Proc. Int. Conf. on GaAs and Related Compounds, Inst. Phys. Sci. 33a, pp 287295 (1977).Google Scholar
13. Donolato, C., SEM/I, 1979,257.Google Scholar
14. Lohnert, K., Nastenrath, M., Balk, L.J., and Kubalek, E., Inst. Phys, Conf. Ser. No. 60, Section 4, pp 179–184 (1981).Google Scholar
15. Beauvineau, J., andSemo, J., Rev. Sci. Instrum. 53 (10) pp 15731576,1982.CrossRefGoogle Scholar
16. Russell, P. E., Herrington, C. R., Holloway, P. H., and Burke, D. E., in Grain Boundaries in Semiconductors, edited by Leamy, H.J., Pike, G. E. and Seager, C. H.( North Holland, New York, 1982)pp 185191.Google Scholar
17. Moore, T. M., and F.Schaake, H., J. Vac. Sci., Technol A1 (3) 1666 ( 1983).CrossRefGoogle Scholar
18. Russell, P.E., Jamjoun, O.,Ahrenkiel, R. K., Kazmerski, L.L., and Mickelsen, R.A., Appl. Phys. Lett. 40(11), 995 (1982).Google Scholar
19. Sheldon, P. H., Hayes, R. E., Nottenburg, R. E., Russell, P. E., Emery, K. A., Ireland, P. J. and Kazmerski, L. L., J. Vac. Sci. Technol., 20,410 (1982).CrossRefGoogle Scholar
20. Ahrenkiel, R. K., Kazmerski, L.L.,Matson, R. J., Osterwald, C.,Massopust, T., Mickelson, R.A. and Chen, W.S., Appl. Phys. Lett., 43,658 (1983).CrossRefGoogle Scholar
21. Donolato, C., J. Appl. Phys., 51,1624 (1980).Google Scholar
22. Russell, P. E. and Herrington, C. R, Proc. Microbeam Analysis Soc., 1982, pp 449–454.Google Scholar
23. Oatlay, C. W., Nixon, W. C. and Pease, R. F. W., Adv. Electron, Elec. Phys. 21 pp.207208,222–228,( 1965).Google Scholar
24. Plows, O. S. and Nixon, W. C.,J. Phys. E: Sci. Instru. 1 595 (1968).CrossRefGoogle Scholar
25. Gopinath, A., Gopinathan, K. G. and Thomas, P. R., SEM/I, 1978, 375.Google Scholar
26. Jerke, J. M., Hartman, D. M., Swing, R. E., Young, R. D. and Keery, W. J., Semiconductor Microlithography II, SPIE 100,37, (1977).Google Scholar