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High Speed Ge Photodetectors on Si Platform for GHz Optical Communications in C+L Bands

Published online by Cambridge University Press:  26 February 2011

Jifeng Liu ,
Jurgen Michel ,
Douglas D. Cannon ,
Wojciech Giziewicz ,
D. Pan ,
David T. Danielson ,
Samerkhae Jongthammanurak ,
John Yasaitis ,
Kazumi Wada  and
Clifton G. Fonstad
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Jifeng Liu
Affiliation:
Department of Materials Science and Engineering, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139
Jurgen Michel
Affiliation:
Department of Materials Science and Engineering, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139
Douglas D. Cannon
Affiliation:
Department of Materials Science and Engineering, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139
Wojciech Giziewicz
Affiliation:
Department of Electrical Engineering and Computer Science, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139
D. Pan
Affiliation:
Department of Materials Science and Engineering, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139
David T. Danielson
Affiliation:
Department of Materials Science and Engineering, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139
Samerkhae Jongthammanurak
Affiliation:
Department of Materials Science and Engineering, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139
John Yasaitis
Affiliation:
Analog Devices, Inc., Cambridge, Massachusetts 02139
Kazumi Wada
Affiliation:
Department of Materials Science and Engineering, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139
Clifton G. Fonstad
Affiliation:
Department of Electrical Engineering and Computer Science, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139
Lionel C. Kimerling
Affiliation:
Department of Materials Science and Engineering, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139
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Abstract

We present a high speed, high responsivity, tensile strained Ge p-i-n photodetector selectively grown on Si platform that covers the whole C band and a large part of the L band for high capacity optical communications. The device shows a 3dB bandwidth of 2.5GHz and its responsivities at 1310nm and 1550nm are comparable to commercial InGaAs photodetectors currently used in telecommunications. The device has promising applications in Si microphotonics such as the fiber-to-the-home technology.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 829: Symposium B – Progress in Compound Semiconductor Materials IV – Electronic and Optoelectronic Applications , 2004 , B6.9
Copyright
Copyright © Materials Research Society 2005

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References

REFERENCES

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