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Buried Metal/III-V Semiconductor Heteroepitaxy: Approaches to Lattice Matching

Published online by Cambridge University Press:  28 February 2011

C.J. PalmstrØM ,
J. P. Harbison ,
T. Sands ,
R. Ramesh ,
T. G. Finstad ,
S. Mounier ,
J.G. Zhu ,
C.B. Carter ,
L.T. Florez  and
V.G. Keramidas
C.J. PalmstrØM
Affiliation:
Bellcore, 331 Newman Springs Road, Red Bank, NJ 07701-7040
J. P. Harbison
Affiliation:
Bellcore, 331 Newman Springs Road, Red Bank, NJ 07701-7040
T. Sands
Affiliation:
Bellcore, 331 Newman Springs Road, Red Bank, NJ 07701-7040
R. Ramesh
Affiliation:
Bellcore, 331 Newman Springs Road, Red Bank, NJ 07701-7040
T. G. Finstad
Affiliation:
Bellcore, 331 Newman Springs Road, Red Bank, NJ 07701-7040
S. Mounier
Affiliation:
Bellcore, 331 Newman Springs Road, Red Bank, NJ 07701-7040
J.G. Zhu
Affiliation:
Cornell University, Department of Materials Science and Engineering, Bard Hall, Ithaca, NY 14853
C.B. Carter
Affiliation:
Cornell University, Department of Materials Science and Engineering, Bard Hall, Ithaca, NY 14853
L.T. Florez
Affiliation:
Bellcore, 331 Newman Springs Road, Red Bank, NJ 07701-7040
V.G. Keramidas
Affiliation:
Bellcore, 331 Newman Springs Road, Red Bank, NJ 07701-7040
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Abstract

Metallic transition metal aluminides and gallides with the CsCI structure and semi-metallic rare earth monopnictides with the NaCi structure have been grown as buried conducting layers in III-V compound semiconductor heterostructures. The criteria for achieving (100) oriented epitaxial growth on (100)111-V semiconductor surfaces is different for each class of materials. The methods used to achieve III-V/metal/llI-V heteroepitaxial structures are discussed here with emphasis on the different approaches needed for the aluminides or gallides and the monopnictides. Work producing exact lattice matching between the buried metal and surrounding semiconductor layers makes possible the separation of lattice mismatch effects from those due to other interface parameters. Results to date indicate that defect structures in the overgrown semiconductor layers arise more because of differences in crystal symmetry, interface chemistry and bonding across the interface than lattice mismatch.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 198: Symposium V – Epitaxial Heterostructures , 1990 , 153
Copyright
Copyright © Materials Research Society 1990

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References

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