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AC Loss Modeling in Ba0.5Sr0.5TiO3 Using Dielectric Relaxation

Published online by Cambridge University Press:  01 February 2011

Nadia K. Pervez ,
Jiwei Lu ,
Susanne Stemmer  and
Robert A. York
Nadia K. Pervez
Affiliation:
Department of Electrical and Computer Engineering, University of California, Santa Barbara, CA 93106, U.S.A.
Jiwei Lu
Affiliation:
Materials Department, University of California, Santa Barbara, CA 93106, U.S.A.
Susanne Stemmer
Affiliation:
Materials Department, University of California, Santa Barbara, CA 93106, U.S.A.
Robert A. York
Affiliation:
Department of Electrical and Computer Engineering, University of California, Santa Barbara, CA 93106, U.S.A.
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Abstract

In universal relaxation, a material's complex dielectric susceptibility follows a fractional power law f1-n where 0 < n < 1 over multiple decades of frequency. In a variety of materials, including Ba0.5Sr0.5Ti03, dielectric relaxation has been observed to follow this universal relaxation model with values of n close to 1. In this work we have shown that the universal relaxation model can be used to calculate dielectric loss even when n is very close to 1. Our calculated Q-factors agree with measured values at 1 MHz; this agreement suggests that this technique may be used for higher frequencies where network analyzer measurements and electrode parasitics complicate Q-factor determination.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 833: Symposium G – Materials, Integration, and Packaging Issues for High-Frequency Devices II , 2004 , G1.10
Copyright
Copyright © Materials Research Society 2005

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References

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