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InP Self Assembled Quantum Dot Lasers Grown on GaAs Substrates by Metalorganic Chemical Vapor Deposition

Published online by Cambridge University Press:  21 March 2011

R. D. Dupuis ,
J. H. Ryou ,
R. D. Heller ,
G. Walter ,
D. A. Kellogg ,
N. Holonyak Jr ,
C. V. Reddy ,
V. Narayanamurti ,
D. T. Mathes  and
R. Hull
R. D. Dupuis
Affiliation:
Microelectronics Research Center, The University of Texas at Austin 10100 Burnet Road, Building 160, Austin, TX 78758 USA+1-512-471-0537, +1-512-471-0957, dupuis@mail.utexas.edu
J. H. Ryou
Affiliation:
Microelectronics Research Center, The University of Texas at Austin 10100 Burnet Road, Building 160, Austin, TX 78758 USA+1-512-471-0537, +1-512-471-0957, dupuis@mail.utexas.edu Now with Honeywell VCSEL Products Division, Plymouth MN 55441
R. D. Heller
Affiliation:
Microelectronics Research Center, The University of Texas at Austin 10100 Burnet Road, Building 160, Austin, TX 78758 USA+1-512-471-0537, +1-512-471-0957, dupuis@mail.utexas.edu
G. Walter
Affiliation:
Center for Compound Semiconductor Microelectronics, The University of Illinois at Urbana- Champaign, Urbana, IL
D. A. Kellogg
Affiliation:
Center for Compound Semiconductor Microelectronics, The University of Illinois at Urbana- Champaign, Urbana, IL
N. Holonyak Jr
Affiliation:
Center for Compound Semiconductor Microelectronics, The University of Illinois at Urbana- Champaign, Urbana, IL
C. V. Reddy
Affiliation:
Gordon McKay Laboratory of Applied Science, Harvard University, Cambridge, MA 02138
V. Narayanamurti
Affiliation:
Gordon McKay Laboratory of Applied Science, Harvard University, Cambridge, MA 02138
D. T. Mathes
Affiliation:
Department of Materials Science and Engineering, The University of Virginia, Charlottesville, VA
R. Hull
Affiliation:
Department of Materials Science and Engineering, The University of Virginia, Charlottesville, VA
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Abstract

We describe the operation of lasers having active regions composed of InP selfassembled quantum dots embedded in In0.5Al0.3Ga0.2P grown on GaAs (100) substrates by MOCVD. InP quantum dots grown on In0.5Al0.3Ga0.2P have a high density on the order of about 1–2×10 cm−2 with a dominant size of about 10–15 nm for 7.5 ML growth.[1] These In0.5Al0.3Ga0.2P/InP quantum dots have previously been characterized by atomic-force microscopy, high-resolution transmission electron microscopy, and photoluminescence.[2] We report here the 300K operation of optically pumped red-emitting quantum dots using both double quantum-dot active regions and quantum-dot coupled with InGaP quantum-well active regions. Optically and electrically pumped 300K lasers have been obtained using this active region design; these lasers show improved operation compared to the lasers having QD-based active regions with threshold current densities as low as Jth ∼ 0.5 KA/cm2.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 692: Symposium H – Progress in Semiconductor Materials for Optoelectronic Applications , 2001 , H11.6.1
Copyright
Copyright © Materials Research Society 2002

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References

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