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Grain boundary impedance of doped Mn–Zn ferrites

Published online by Cambridge University Press:  31 January 2011

D. Arcos
Affiliation:
Institute of Applied Magnetism (RENFE-UCM), and Institute of Materials Science, CSIC, P.O. Box 155, 28230, Las Rozas (Madrid), Spain
M. Vázquez
Affiliation:
Institute of Applied Magnetism (RENFE-UCM), and Institute of Materials Science, CSIC, P.O. Box 155, 28230, Las Rozas (Madrid), Spain
R. Valenzuela*
Affiliation:
Institute for Materials Research, National University of Mexico, 04510, Mexico
M. Vallet-Regí
Affiliation:
Department of Inorganic and Bioinorganic Chemistry, Facultad de Farmacia. UCM. 28040, Madrid, Spain
*
a)Address all correspondence to this author. P.O. Box 70-360, México D.F. 04510, Mexico. e-mail: monjaras@servidor.unam.mx
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Abstract

The electrical properties of Mn–Zn ferrites undoped and doped with Nb2O5 and V2O5 were investigated by impedance spectroscopy. The observed impedance response corresponded to that of a highly resistive grain boundary component in series with a less resistive bulk component. The presence of Nb5+ and V5+ led to an enhancement in the electrical resistance, especially in grain boundaries, as well as a greater difference in the electrical behavior between bulk and grain boundary components. The different dopant performance of these two components is discussed on the basis of grain boundary structure and chemical data, electrical conductivity, and dielectric dispersion.

Type
Articles
Copyright
Copyright © Materials Research Society 1999

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References

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