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Tem Characterization of GaAs Pin Diodes at Low Temperatures on Si Substrates

Published online by Cambridge University Press:  21 February 2011

G. Aragon ,
S.I. Molina ,
L. Gonzalez ,
Y. Gonzalez ,
J.V. Anguita ,
F. Briones  and
R. Garcia
G. Aragon
Affiliation:
Departamento de Ciencia de los Materiales e Ingenierίa Metalúrgica y Quίmica Inorgánica. Universidad de Cádiz. Apdo 40, Puerto Real, 11510-Cádiz. Spain.
S.I. Molina
Affiliation:
Departamento de Ciencia de los Materiales e Ingenierίa Metalúrgica y Quίmica Inorgánica. Universidad de Cádiz. Apdo 40, Puerto Real, 11510-Cádiz. Spain.
L. Gonzalez
Affiliation:
Centro Nacional de Microelectrônica. Serrano 144, 28006-Madrid. Spain.
Y. Gonzalez
Affiliation:
Centro Nacional de Microelectrônica. Serrano 144, 28006-Madrid. Spain.
J.V. Anguita
Affiliation:
Centro Nacional de Microelectrônica. Serrano 144, 28006-Madrid. Spain.
F. Briones
Affiliation:
Departamento de Ciencia de los Materiales e Ingenierίa Metalúrgica y Quίmica Inorgánica. Universidad de Cádiz. Apdo 40, Puerto Real, 11510-Cádiz. Spain.
R. Garcia
Affiliation:
Departamento de Ciencia de los Materiales e Ingenierίa Metalúrgica y Quίmica Inorgánica. Universidad de Cádiz. Apdo 40, Puerto Real, 11510-Cádiz. Spain.
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Abstract

GaAs pin and nip diodes have been grown by Atomic Layer Molecular Beam Epitaxy at 350°C on p-type and n-type (001 ) Si substrates respectively. These devices present different electrical characteristics. TEM characterization of these structures shows an asymmetric planar defect distribution whose orientation depends on the type of doping introduced in the GaAs layer immediately grown on the Si substrate. These results can be explained taking into account that the dissociation of dislocations depends both on the polarity of the dislocation and the doping type of the epilayer.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 326: Symposium M – Growth, Processing, and Characterization of Semiconductor Heterostructures , 1993 , 97
Copyright
Copyright © Materials Research Society 1994

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