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Rapid Thermal Annealing and Oxidation of Silicon Wafers with Back-Side Films

Published online by Cambridge University Press:  10 February 2011

A. T. Fiory
A. T. Fiory*
Affiliation:
Bell Laboratories, Lucent Technologies, 700 Mountain Avenue, Murray Hill NJ 07974
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Abstract

Temperatures for lamp-heated rapid thermal processing of wafers with various back-side films were controlled by a Lucent Technologies pyrometer which uses a/c lamp ripple to compensate for emissivity. Process temperatures for anneals of arsenic and boron implants were inferred from post-anneal sheet resistance, and for rapid thermal oxidation, from oxide thickness. Results imply temperature control accuracy of 12°C to 17°C at 3 standard deviations.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 470: Symposium F – Rapid Thermal and Integrated Processing IV , 1997 , 49
Copyright
Copyright © Materials Research Society 1997

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References

REFERENCES

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