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Crystal Growth and Electrical Characterization of InSbN Grown by Metalorganic Vapor Phase Epitaxy

Published online by Cambridge University Press:  01 February 2011

T. Ishiguro ,
Y. Kobori ,
Y. Nagawa ,
Y. Iwamura  and
S. Yamaguchi
T. Ishiguro
Affiliation:
Department of Electrical, Electronic and Information Engineering, Kanagawa University, 3–27–1 Rokkakubashi, Kanagawa-ku, Yokohama, 221–8686, Japan
Y. Kobori
Affiliation:
Department of Electrical, Electronic and Information Engineering, Kanagawa University, 3–27–1 Rokkakubashi, Kanagawa-ku, Yokohama, 221–8686, Japan
Y. Nagawa
Affiliation:
Department of Electrical, Electronic and Information Engineering, Kanagawa University, 3–27–1 Rokkakubashi, Kanagawa-ku, Yokohama, 221–8686, Japan
Y. Iwamura
Affiliation:
Department of Electrical, Electronic and Information Engineering, Kanagawa University, 3–27–1 Rokkakubashi, Kanagawa-ku, Yokohama, 221–8686, Japan
S. Yamaguchi
Affiliation:
Department of Electrical, Electronic and Information Engineering, Kanagawa University, 3–27–1 Rokkakubashi, Kanagawa-ku, Yokohama, 221–8686, Japan
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Abstract

InSb1-xNx was grown on GaAs substrate by low-pressure metalorganic vapor phase epitaxy. Carrier gases were hydrogen or the mix of hydrogen and nitrogen. In both cases, X-ray analysis demonstrated that nitrogen was incorporated into InSb1-xNx up to 0.24.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 799: Symposium Z – Progress in Compound Semiconductor Materials III - Electronic and Optoelectronic Applications , 2003 , Z5.16
Copyright
Copyright © Materials Research Society 2004

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References

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