Hostname: page-component-76fb5796d-dfsvx Total loading time: 0 Render date: 2024-04-25T10:31:59.076Z Has data issue: false hasContentIssue false
  • English
  • Français

Surface Characteristics, Etching Behaviors and Chemicalmechanical Polishing of Aluminum Alloy thin Films

Published online by Cambridge University Press:  10 February 2011

Wei-Tsu Tseng ,
Jun Wu  and
Yee-Shyi Chang
Wei-Tsu Tseng
Affiliation:
National Nano Device Laboratories, Hsinchu 300, Taiwan
Jun Wu
Affiliation:
National Nano Device Laboratories, Hsinchu 300, Taiwan Institute of Materials Science and Engineering, National Tsing-Hua University, Hsinchu 300, Taiwan
Yee-Shyi Chang
Affiliation:
National Nano Device Laboratories, Hsinchu 300, Taiwan Institute of Materials Science and Engineering, National Tsing-Hua University, Hsinchu 300, Taiwan
Get access

Abstract

Etching behaviors of various Al alloy thin films in H2O2-based acidic etchants are investigated in this study. The pH and H2O2 content in the etchant are varied in order to simulate the case where Al thin films are subject to chemical-mechanical polishing (CMP) using slurries of different compositions. Corrosion current and thickness of the native oxide on pure-Al, AI-1%Si, Al-0.5%Cu, AI-1%Si-0.5%Cu, and AI-1%Cu thin films are determined from Tafel and ESCA analyses respectively. Comparisons between etch rate and CMP polish rate data suggest that Al-CMP removal process depends strongly on the chemical reactions by the oxidizer (slurry). Mechanical abrasion by the abrasive particles plays only an auxiliary role during Al CMP. In addition, alloy composition (% Si and % Cu) influence both etching and polishing behaviors to a great extent. The underlying mechanisms for etching and polishing are discussed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 477 , 1997 , 125
Copyright
Copyright © Materials Research Society 1997

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

[1] Fury, M. A., Scherber, D. L., Stell, M. A., Mat. Res. Soc. Bull., 20, #11, p. 61 (1995).CrossRefGoogle Scholar
[2] Wang, Y.-L., Tsai, M.-S., Tseng, W.-T., Chang, S.-T., Dai, B.-T., Feng, M.-S., Electrochemical Society Meeting Abstracts, 96–2, p. 606 (1996).Google Scholar
[3] Tseng, W.-T., Wang, Y.-L., Tsai, M.-S., Wu, J., Feng, M.-S., Electrochemical Society Meeting Abstracts, 96–2, p. 632 (1996).Google Scholar
[4] Potter, E. C., Electrochemistry: Principles and Applications, Cleaver-Hume Press, London, 1970, pp. 124–154.Google Scholar
[5] Strohmeier, B. R., Surf. Interface Anal., 15, p. 51 (1990).CrossRefGoogle Scholar
[6] Pourbaix, M., Atlas of Electrochemical Equilibria in Aqueous Solutions, Pergamon Press, Oxford, 1966, pp. 168–176.Google Scholar
[7] Parks, G. A., Chem. Rev., 65, p. 177 (1965).CrossRefGoogle Scholar
[8] Cook, L. M., J. Non-Crystal. Solids, 120, p. 152 (1990).CrossRefGoogle Scholar
[9] Cook, L. M., Wang, J. F., James, D. B., Sethuraman, A. R., Semicond Inter., p. 141 (Nov. 1995).Google Scholar
[10] Griffin, A. J., Jr., Brotzen, F. R., Dunn, C. F., J. Electrochem. Soc., 139, p. 699 (1992).CrossRefGoogle Scholar
[11] Lawrence, J. D., McPherson, J. W., IEEE Inter. Reliab. Phys. Symp., 29, p. 102 (1991).Google Scholar