Hostname: page-component-76fb5796d-45l2p Total loading time: 0 Render date: 2024-04-25T07:27:15.933Z Has data issue: false hasContentIssue false
  • English
  • Français

Chromium Impurity States in Pb1-xGexTe Alloys Under Pressure

Published online by Cambridge University Press:  26 February 2011

Evgeny Skipetrov ,
Alexey Plastun ,
Boris Kovalev ,
Lyudmila Skipetrova ,
Tatyana Topchevskaya  and
Vasily Slyn'ko
Evgeny Skipetrov
Affiliation:
skip@mig.phys.msu.ruM.V. Lomonosov Moscow State UniversityFaculty of PhysicsLeninskie Gory, 1Moscow119992Russian Federation+7 (495) 9394493+7 (495) 9329217
Alexey Plastun
Affiliation:
skip@mig.phys.msu.ruM.V. Lomonosov Moscow State UniversityFaculty of PhysicsLeninskie Gory, 1Moscow119992Russian Federation+7 (495) 9394493+7 (495) 9329217
Boris Kovalev
Affiliation:
skip@mig.phys.msu.ruM.V. Lomonosov Moscow State UniversityFaculty of PhysicsLeninskie Gory, 1Moscow119992Russian Federation+7 (495) 9394493+7 (495) 9329217
Lyudmila Skipetrova
Affiliation:
skip@mig.phys.msu.ruM.V. Lomonosov Moscow State UniversityFaculty of PhysicsLeninskie Gory, 1Moscow119992Russian Federation+7 (495) 9394493+7 (495) 9329217
Tatyana Topchevskaya
Affiliation:
skip@mig.phys.msu.ruM.V. Lomonosov Moscow State UniversityFaculty of PhysicsLeninskie Gory, 1Moscow119992Russian Federation+7 (495) 9394493+7 (495) 9329217
Vasily Slyn'ko
Affiliation:
skip@mig.phys.msu.ruM.V. Lomonosov Moscow State UniversityFaculty of PhysicsLeninskie Gory, 1Moscow119992Russian Federation+7 (495) 9394493+7 (495) 9329217
Get access

Abstract

The galvanomagnetic effects in the n-Pb1-xGexTe:Cr (x=0.02-0.13) alloys at the temperatures 4.2≤T≤300 K and under hydrostatic compression up to 17 kbar have been investigated. The metal-insulator transition under the increase of germanium content in the alloys and insulator-metal transition, induced by pressure in Pb1-xGexTe:Cr (x=0.10) alloy, were revealed. Using the experimental data in the frame of two-band Kane dispersion relation the dependences of the free electron concentration and the Fermi level position on the matrix composition and on the pressure were calculated. The composition and pressure coefficients of chromium deep level movement were obtained and the models of the electronic structure reconstruction under varying the alloy composition and under pressure were proposed.

Keywords

electronic structureCrmetal-insulator transition
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 987: Symposium PP – Materials Research at High Pressure , 2006 , 0987-PP03-02
Copyright
Copyright © Materials Research Society 2007

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1. Volkov, B.A., Ryabova, L.I., Khokhlov, D.R., Physics-Uspekhi 45, 819 (2002).Google Scholar
2. Story, T., Acta Phys. Polon. A92, 663 (1997).Google Scholar
3. Story, T., Acta Phys. Polon. A91, 173 (1997).Google Scholar
4. Skipetrov, E.P., Chernova, N.A., Skipetrova, L.A., Slyn'ko, E.I., Mater. Sci. Eng. B 91–92, 412 (2002).Google Scholar
5. Skipetrov, E., Zvereva, E., Skipetrova, L., Kovalev, B., Volkova, O., Golubev, A., Slyn'ko, E., Phys. Stat. Sol. (b) 241, 1100 (2004).Google Scholar
6. Vulchev, V.D., Borisova, L.D., Dimitrova, S.K., Phys. Stat. Sol. (a) 97, K79 (1986).Google Scholar
7. Vulchev, V.D., Borisova, L.D., Phys. Stat. Sol. (a) 99, K53 (1987).Google Scholar
8. Kashirskaya, L.M., Ryabova, L.I., Tananaeva, O.I., Shirokova, N.A., Sov. Phys. Semicond. 24, 848 (1990).Google Scholar
9. Slyn'ko, V.E., Lviv Univ., Visnyk, Ser. Physic. 34, 291 (2001).Google Scholar
10. Dornhaus, R., Nimtz, G. and Schlicht, B., Narrow-Gap Semiconductors (Springer-Verlag, Berlin, 1983).Google Scholar
11. Akimov, B.A., Vadhva, R.S., Chudinov, S.M., Sov. Phys. Semicond. 12, 1927 (1978).Google Scholar
12. Skipetrov, E.P., Zvereva, E.A., Dmitriev, N.N., Golubev, A.V., Slynko, V.E., Semiconductors 40, 893 (2006).Google Scholar
13. Antcliffe, G.A., Chapman, R.A., Appl. Phys. Lett. 26, 576 (1975).Google Scholar