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High-Quality, Smooth Fe3O4 Thin Films on Si By Controlled Oxidation of Fe in CO/CO2

Published online by Cambridge University Press:  17 May 2012

Fengyuan Shi ,
Hua Xiang ,
M. S. Rzchowski ,
Y. A. Chang  and
P.M. Voyles
Fengyuan Shi
Affiliation:
Department of Materials Science and Engineering, University of Wisconsin-Madison, Madison, Wisconsin 53706, USA
Hua Xiang
Affiliation:
Department of Materials Science and Engineering, University of Wisconsin-Madison, Madison, Wisconsin 53706, USA
M. S. Rzchowski
Affiliation:
Department of Physics, University of Wisconsin-Madison, Madison, Wisconsin 53706, USA
Y. A. Chang
Affiliation:
Department of Materials Science and Engineering, University of Wisconsin-Madison, Madison, Wisconsin 53706, USA
P.M. Voyles
Affiliation:
Department of Materials Science and Engineering, University of Wisconsin-Madison, Madison, Wisconsin 53706, USA
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Abstract

We fabricated Fe3O4 thin films on TiN buffered Si by CO/CO2 oxidation at 160 °C. The easy saturation of the magnetization at high magnetic field and high resolution scanning transmission electron microscopy (HRSTEM) images show low defect density, smooth Fe3O4 thin films. Oxidation at 400 °C resulted in an undesirable second phase in between the TiN and the un-oxidized Fe, but changes in total gas pressure did not lead to a second phase. The crystal structure of this second phase is similar to Fe2TiO4 (ulvöspinel) from HRSTEM and STEM electron energy loss spectroscopy. Fe3O4 thin films grown at 160 °C follow a power law growth model with an exponent of 0.23±0.03.

Keywords

electron energy loss spectroscopy (EELS)scanning transmission electron microscopy (STEM)magnetic
Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 1430: Symposium E – Materials and Physics of Emerging Nonvolatile Memories , 2012 , mrss12-1430-e03-15
Copyright
Copyright © Materials Research Society 2012

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References

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