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SiGe Nanowires Grown by LPCVD using Ga-Au Catalysts

Published online by Cambridge University Press:  11 January 2012

M. Monasterio
Affiliation:
Tecnología Electrónica, Universidad Politécnica de Madrid, E.T.S.I.T., 28040 Madrid, Spain
A. Rodríguez
Affiliation:
Tecnología Electrónica, Universidad Politécnica de Madrid, E.T.S.I.T., 28040 Madrid, Spain
T. Rodríguez
Affiliation:
Tecnología Electrónica, Universidad Politécnica de Madrid, E.T.S.I.T., 28040 Madrid, Spain
C. Ballesteros
Affiliation:
Física, Universidad Carlos III, 28911 Leganés (Madrid), Spain
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Abstract

The use of Ga-Au alloys as metal catalysts for the growth of SiGe nanowires has been investigated. The grown nanowires are cylindrical and straight, with a defect-free crystalline structure, sharp nanowire-droplet interfaces and an almost constant Ge atomic fraction throughout all their length. These features represent significant improvements over the results obtained using pure Au.

Type
Research Article
Copyright
Copyright © Materials Research Society 2012

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References

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